Semikron POWER MODULES IGBT DRIVERS DISCRETES Diodes Thyristors Compact designs and high power density High peak overload capabilities Multiple axis in one drive or modular drives with common DC bus Decentralized high IP grade drives Products SEMITOP E1/E2 MiniSKiiP SEMiX 6 Press-Fit SEMIPACK Drivers Compact designs and high power density Platform designs, covering wide power range with the same mounting concept Products SEMITOP E1/E2 MiniSKiiP SEMiX 3 Press-Fit SEMiX 6 Press-Fit SEMITRANS SEMiSTART SKiiP3/4 IPM SEMIPACK Compact designs and high power density High reliability in harsh environments Products SEMiX 3 Press-Fit SEMITRANS 10 SEMITRANS 20 SKiiP3/4 IPM SEMiSTART SEMIPACK Drivers Power Electronics Stacks Drivers Power Electronics Stacks SEMITRANS®20 500kW up to 2MW APPLICATION Power Electronics for Wind Turbines SEMITOP E1/E2 SEMiX 3 Press-Fit SEMiX MiniSKiiPSEMITRANS SKiM63/93 SEMiX 6 Press-Fit SEMITRANS10 SEMITRANS SEMIPACK SEMITRANS20 SEMIPACK Compact designs and high power density High peak overload capabilities Multiple axis in one drive or modular drives with common DC bus Highest reliability and lifetime Products Compact designs and high power density High reliability in harsh environments up to 1500VDC and 1000VAC Products SEMIKRON advanced power modules for maximum reliability and efficiency Customized stacks for dedicated wind turbine converters Customized heatsinks for IPMs (SKiiP) for integration into converters Products SEMIKRON’s portfolio includes a wide range of products for wind energy applications, from small to medium power modules for pitch and yaw drives to high power components for multi-megawatt power converters. From individual modules including dedicated drivers to high power SKiiP4 IPMs and ready-to-use power electronic stacks – SEMIKRON has the solution. The demand for reliable spare parts to ensure continuous energy harvesting until the end of the turbine life is becoming increasingly important. SEMIKRON has a broad portfolio of products to ensure reliable operation and maintenance for wind turbine converters. SEMIKRON products offer maximum reliability for on- and off­shore wind turbines both in industry standard packages and in high power SKiiP4 IPMs and power electronic stacks. YAW & PITCH DRIVES MAIN CONVERTER 5kW – 100kW 1MW – 15MW SPARE PARTS & SERVICE 1MW – 15MW Drivers SKiiP3/4 IPM SKiiP3/4 IPM Drivers Drivers Power Electronics Stacks Power Electronic Stacks APPLICATION Power Electronics for Solar Energy SEMIKRON’s portfolio includes a wide range of products for efficient solar inverters in all power ranges: residential, industrial and utility scale applications. From individual modules, including dedicated drivers, to high power SKiiP4 IPMs and ready-to-use power electronic stacks – SEMIKRON has the solution. SEMIKRON offers a large portfolio of 3-level power modules, IPMs and power electronic stacks, which can reduce system costs significantly as well as optimize annual energy production, especially for increased DC voltages up to 1500VDC. SEMITOP® E1/E2 8kW up to 225kW MiniSKiiP® 20kW up to 300kW STRING INVERTERS 5kW – 300kW 1500VDC Capability High efficiency High reliability to reduce downtime Products SEMITOP E1/E2 MiniSKiiP SEMiX 5 Drivers CENTRAL INVERTERS 250kW – 6MW 1500VDC Capability High efficiency High reliability to reduce downtime Products SEMiX 5 SEMiX 3 Press-Fit SEMITRANS SEMITRANS 10 SEMITRANS 20 SKiiP3/4 IPM Drivers Power Electronic Stacks SEMIKRON APPLICATION Power Electronics for Power Quality The availability of infrastructure systems strongly depends on reliable power supplies, irrespective of whether these systems are servers and cloud storage systems, critical traffic control or hospital services. Uninterruptable Power Supplies (UPS) ensure continuous operation of these critical systems. In SEMIKRON power modules, flexible topologies equipped with the latest IGBT and diode chips ensure maximum conversion efficiency for double conversion UPS systems. This efficiency can be further improved using Silicon Carbide technology. MiniSKiiP® 3 Up to 100kVA SEMiX®5 50kVA up to 500kVA APPLICATION LOW POWER AND MODULAR UPS SYSTEMS 10kVA – 100kVA – High efficiency systems Compact designs and high power density Products SEMITOP E1/E2 MiniSKiiP SEMiX 5 SEMIPACK Drivers STANDALONE AND TOWER UPS SYSTEMS 100kVA – 5MVA High efficiency systems Compact designs and high power density Products MiniSKiiP SEMiX 5 SEMiX 3 Press-Fit SEMITRANS SEMITRANS 10 SEMITRANS 20 SEMIPACK SKiiP3/4 IPM Drivers APPLICATION Power Electronics for Energy Storage With decentralized renewable energy sources in our power grid, the demand for energy storage systems to stabilize fluctuations is quickly growing. SEMIKRON’s portfolio includes a wide range of products for energy storage systems. From small and medium power modules for residential and industry scale storage systems to high power components for utility-grade storage systems. SEMIKRON products deliver maximum reliability, meeting the extended lifetime requirements of energy storage systems. From individual modules including dedicated drivers to high power SKiiP4 IPMs and ready-to-use power electronic stacks – SEMIKRON has the solution. SEMITRANS® 10 500kW up to 2MW SEMiX® 5 50kW up to 150kW – Residential scale – Commercial/Industrial scale – Solar and Storage Compact designs and high power density High efficiency High reliability to reduce downtime Products SEMITOP E1/E2 MiniSKiiPSEMiX 5 SEMiX 3 Press-Fit SEMITRANS Drivers – Commercial/Industrial scale – Utility scale – Solar and Storage 1500VDC Capability High efficiency High reliability to reduce downtime Products SEMITOP E1/E2 SEMiX 5 SEMiX 3 Press-Fit SEMITRANS SEMITRANS 10 SEMITRANS 20 SKiiP3/4 IPM Drivers Power Electronics Stacks LOW/MEDIUM POWER MEDIUM/HIGH POWER 8kW – 75kW 50kW – 5MW SEMIKRON APPLICATION Power Electronics for EV Chargers As electric vehicles become widespread, so must the infra­structure to charge them. One of the main requirements for the widespread use of electric vehicles is an accessible EV charging infrastructure. Governments and industries worldwide are pre­paring to invest in charging infrastructures. Availability and costs are the key to success in the fast growing EV Charger market. As the specialist in power electronics, we use state-of-the-art topologies featuring standard components, guaranteeing both excellent efficiency and availability. SEMIK­RON offers a comprehensive portfolio of products that meet the needs of fast charge equipment from as little as 8kW up to the megawatt range. – Compact designs and high power density High reliability to reduce downtime Forward-looking topologies High efficiency SEMITOP® E1/E2 8kW up to 120kW Products PowerCell SEMITOP E1/E2 SEMiX 5 SEMiX 3 Press-Fit SEMITRANS SKiM 63/93 SEMIPACK Drivers Power Electronic Stacks Power Electronics for Electric and Electrified Vehicles Electrical vehicles require highly reliable power electronics for the electrical drive system. SEMIKRON, a leading supplier of power electronics, has been supplying products to the EV markets for more than 10 years. From chips and modules to entire converters, the full range of SEMIKRON products can be found in passenger cars, trucks, buses, industrial and light electric vehicles. Power modules for auxiliary applications such as DC/DC converters, fuel cell compressor inverters, or exciter functions for drive systems need reliable solutions in small footprints. For these applications, SEMIKRON’s SEMITOP E1/E2 series offers flexible solutions tailored to the individual requirements. SKAI® 3 LV Up to 55kVA SKiM® 63/93 60kW up to 180kW Power Modules for Electric Drive Systems (EDS) INDUSTRIAL & LIGHT EV – F Power Modules for Electric Drive Systems (EDS) and Auxiliaries SEMiX Spring SKiM 63/93 SKiM 63/93 SEMiX 3 Press-Fit SEMiX Spring SEMiX Spring SEMiX 5 SEMiX 3 Press-Fit SEMiX 3 Press-Fit SKiM 63/93 Converter/Inverter SEMiX 5 Power Modules for Auxiliary Inverters for Electric Drive Systems (EDS) SEMITOP E1/E2 SEMITOP E1/E2 SKAI 2 HV Converter/Inverter Converter/Inverter for 48V Mild Hybrid Systems Converter/Inverter for 48V Mild Hybrid Systems for Electric Drive Systems (EDS) SKAI 3 LV SKAI 3 LV SKAI 3 LV SKAI 2 HV APPLICATION Power Electronics for Traction Applications Whenever we talk about traction applications, we see extremely high demand for reliability, lifetime and safety. SEMIKRON is offering this requirements to our customers since we developed the first isolated power module on the market in 1974. For 25 years, our highly reliable SKiiPIPMs are driving light rails, trams and subways all over the world. With our new SEMITRANS 20 power module family, SEMIKRON brings latest sinter and bonding technology to the new high power standard package. SEMIKRON stands also for innovati­ve solutions for auxiliary power supplies: our silicon and silicon carbide powered devices, especially the SEMITRANS and SEMITOP module families, allow reliable, efficient and compact systems. AUXILIARY POWER SUPPLY 5kW – 500kW Compact designs and high power density High reliability in harsh environments High power quality High efficiency Products SEMITOP E1/E2 MiniSKiiP SEMiX 3 Press-Fit SEMITRANS SEMITRANS 10 SEMITRANS 20 Drivers SEMITRANS®20 200kW up to 1MW MAIN TRACTION DRIVE 500kW – 10MW Highest reliability and lifetime High power cycling capability Long lifetime and availability Products SEMITRANS 10 SEMITRANS 20 SEMIPACK SKiiP3/4 IPM Drivers SEMIKRON Product News PAGE Generation 7 IGBT 28 SEMiX® 3 Press-Fit 28 Silicon Carbide 30 eMPack® Product Concept 30 SEMITRANS® 10 32 SEMITRANS® 20 32 SEMIKUBE® MLI 34 SKiiP® 4 Stack 34 SEMITOP® E1/E2 SEMiX® 6 Press-Fit SEMITRANS® 3 SEMIKRON – PRODUCT NEWS Completing the Generation 7 IGBT Portfolio Industrial Standard Packages with the Latest Generation Chips In recent years, SEMIKRON released several products using the latest Generation 7 IGBTs in the 1200V class. Now it is time to complete the portfolio to cover the full range of power modules for motor drives. For low power, the SEMITOP E1/E2 is now available with IGBT T7 in a CIB (Converter-Inverter-Brake) topology from 10A to 50A and in sixpack configurations from 25A to 100A. The SEMITOP portfolio covers 0.4kW to 30kW of motor power. The SEMiX 6 Press-Fit covers the medium power range from 75A to 200A in CIB and 100A to 250A in sixpack configurations. The modules use IGBT M7, delivering up to 75kW of motor power. Both SEMITOP E1/E2 and SEMiX 6 Press-Fit offer reduced thermal resistance compared to conventional designs. This reduction allows higher power density or lower junction temperatures and thus a longer lifetime. For medium to high power applications, SEMITRANS 2 and 3 half-bridges cover the full range from 150A to 800A. The classic 34mm and 62mm packages use IGBT M7. Common emitter topologies are also available, enabling cost-effective TNPC 3-level designs for UPS systems. Key features Latest generation of IGBT (IGBT M7 and IGBT T7) Higher nominal currents in the same package Reduced saturation voltage, VCE,sat Increased overload junction temperature up to 175°C High humidity robustness Benefits Increased output power Higher efficiency Higher power density Introducing IGBT E7 for 1700V Devices New 1700V IGBT E7 Portfolio in the SEMiX 3 Press-Fit 1700V devices are getting a power density boost with IGBT E7. Compared to the widely used 1700V IGBT4, the new IGBT E7 offers the same current rating with greatly reduced chip area. Along with this outstanding jump in power density, the forward voltage has also dropped by up to 20%, allowing for reduced conduction losses and increased efficiency. In order to provide the new Generation 7 IGBTs in an industrial standard package, SEMIKRON is introducing the 1700V IGBT E7 in the SEMiX 3 Press-Fit housing. With a wide portfolio reaching up to 900A rated current, SEMIKRON offers top-notch power density with the latest technology. Key features Increased current density thanks to IGBT E7 Up to 20% lower VCE,sat compared to 1700V IGBT4 Standard industrial press-fit housing Portfolio from 220A up to 900A Benefits High power density thanks to reduced chip size Increased efficiency with lower VCE,sat Standard industrial press-fit housing Optimized for motor drive applications PRODUCT NEWS – SEMIKRON SEMIKRON – PRODUCT NEWS Introducing the Latest SiC Portfolio Compliment Silicon Carbide with low inductance packages Reach higher power density with the new SEMITOP E1/E2 Silicon Carbide portfolio. With commutation inductances down to 4nH, the SEMITOP E1/E2 packages are the perfect match with the la­test SiC technology. Not only are industrial standard pin layouts available, SEMIKRON also offers a layout which simplifies PCB design and paralleling of modules. In addition to its industrial standard package design, the SEMITOP E1/E2 also offer up to 20% lower thermal resistance compared conventional designs. This decrease allows for chips to operate cooler, extending product lifetime or reducing cooling design effort. Key features SEMITOP E1/E2 industrial standard packages Low commutation inductance, down to 4nH Kelvin source and temperature sensor included for all modules Portfolio from 40A up to 250A based on 1200V SiC MOSFET Half-bridge, H-Bridge, sixpack and TNPC topologies Benefits Supply chain safety thanks to multiple sourcing down to chip level High power density thanks to 20% Rth reduction Reduce magnetics with high switching frequency Simplified PCB with additional optimised SEMIKRON pin layout eMPack® – The Automotive Power Module Platform Concept for the Future of eMobility with High-Performance Power Electronics The transition of complete car platforms to full electric battery vehicle architectures is progressing rapidly. These architectures will demand scalable power electronics solutions for electric drive systems (EDS) that are capable of realizing a wide performance range in an economic way, resulting in an important competitive advantage to vehicle manufacturers. SEMIKRON’S new power module platform eMPack, which is based on a single module concept, is being developed for EDS inverter architectures covering a power range from 100kW up to 750kW. eMPack covers 400V and 800V battery system applications and is available in Silicon IGBT as well Silicon Carbide MOSFET technology. The combination of Silicon Carbide technology with SEMIKRON’s fully sintered, low stray inductance Direct Pressed Die Technology (DPD) enables unmatched power densities combined with high reliability for automotive application. Key features Silicon Carbide MOSFET and Silicon IGBT options 750V / 1200V compatible package delivering up to 900ARMS Double Sided Sintering package for automotive grade reliability Low thermal resistance thanks to DPD technology Flexible cooler arrangements 2.5nH package stray inductance including terminals Simplified mounting concept – all from the top PRODUCT NEWS – SEMIKRON SEMIKRON – PRODUCT NEWS Reach Higher Power in the Existing Footprint Now introducing SEMITRANS 10+ The SEMITRANS 10 package is the undisputed king in the high power converter world. Whether implemented as a half-bridge in 2-level applications with 1200V and 1700V or in a 3-level NPC topology based on 1200V components, the SEMITRANS 10 meets the demands of solar, wind power and energy storage applications. In the 1700V class, the SEMITRANS 10 is available with the IGBT R8 and the reputable SEMIKRON CAL 4 diode. This allows for a full multiple sourcing strategy down to the chip level. As an alternative solution, SEMIKRON is introducing a fully compatible module using the 1700V IGBT E4 and IGBT P4 with 1000A and 1400A, respectively. Both modules will be drop-in replacements for existing designs, minimizing the adaption and tuning effort required, while still enabling multiple sourcing strategies. With the SEMITRANS 10+, SEMIKRON introduces the natural extension to the next level of power density. Equipped with the latest generation 7 IGBTs, it achieves a new nominal current rating of 1800A in half-bridge configurations. The additional AC terminal extends the output current range and supports the powerful chipset to its full potential. As with the standard SEMITRANS 10, the SEMITRANS 10+ is also a key component to a full multiple sourcing approach. Key features Multiple sourcing down to the chiplevel: IGBT R8 and IGBT M7 Fully compatible to the industry standard: IGBT E4 and IGBT P4 Half-bridge in 1200V/1700V Split NPC topology in 1200V with IGBT M7 SEMITRANS 10+ with additional AC terminal for highest power density Benefits Supply chain safety down to the chip level Highest power density in renowned packages High level of flexibility Standard Package for Increased Power Flexible package design for Industrial and Traction applications While offering an industrial standard package, SEMIKRON is raising the bar with the SEMITRANS 20. Enjoy the flexibility of SEMITRANS 20, which allows low-cost industrial and high reliability traction designs in the same package. While focused on cost optimization, the SEMITRANS 20 Industrial version extends power cycling beyond the conventional design. With three AC terminals, the SEMITRANS 20 allows extremely high output current, especially helpful in ANPC configurations for solar and energy storage. The SEMITRANS 20 Traction version achieves five times the power cycling compared to the conventional design through enhancements such as sintering, Silicon Nitride ceramic, AlSiC baseplate and aluminium-clad copper wire bonds. If power cycling is not a concern, then enjoy up to 25% higher output power and higher overload conditions. Key features Traction version: AlSiC Baseplate Silicon Nitride ceramics Sintered chips Aluminium or aluminium-clad copper wire bonds 1700V half-bridge: 1000A & 1200A Key features Industrial version: Copper Baseplate Soldered chips Aluminium wire bonds 1200V half-bridge: 1400A IGBT M7 1700V half-bridge: 1000A & 1200A PRODUCT NEWS – SEMIKRON SEMIKRON – PRODUCT NEWS The New SEMIKUBE for 3-Level Designs SEMIKUBE platform extension for high power, 3-level applications The SEMIKUBE MLI operate up to 1.5MW at the low voltage limit (1500VDC/1000VAC). Designed to fit high power applications, the SEMIKUBE MLI follows the same rigorous SEMIKRON qualification and certifications. The platform maximizes performance and power density thanks to Generation 7 IGBT. Additional features, such as switching pattern control, offer safe operation. The SEMIKUBE MLI is suitable for outdoor cabinets, able to withstand harsh environments, such as high temperature fluctuations. An IP54 rated mounting flange separates the heatsink airflow from the driver electronics, facilitating effective cabinet integration. High Efficiency for High Power Application Air and water cooled IGBT power assembly Power density up to 7 kVA/L Switching frequency up to 15kHz Output current up to 900A AC output voltage up to 1000VAC DC bus voltage up to 1500VDC Designed according to IEC 62109-1 and IEC62477-1 Safe Operation Fully integrated safety management Switching pattern monitoring : analogue measurements THEATSINK, VBUS, IOUT CAN interface for settings and error diagnostic Easy System Integration Modular design per phase for easier handling DC and AC power connection at front Heatsink cooling separate from electronics cooling IP54 mounting Operating temperature range: -25°C to +55°C For Maximum Reliability Higher power density with reduced material count The SKiiPIPM product line sets a benchmark for high perfor­mance and robust inverter design. Both SKiiP3 and SKiiP4 feature high power densities combined with flexible cooling options such as air and water cooling, in addition to customiz­able heatsinks. Reliable driver technology, integrated current sensors and comprehensive protection functions complete the IPM design. To ensure highest reliability and service life, the SKiiP4 power circuitry is 100% solder-free. Sinter technology as die attachment replaces the solder layer, the usual cause of lifetime limitation. Hence, sintering improves power and thermal cycling capability. High performance cooling (HPC) technology has been intro­duced, providing approximately 25% more output capability compared to standard water cooling. A double-sided mounting HPC water cooler is also available, enabling an even higher power density. Key features 1200V and 1700V chipsets Sixpack (only SKiiP3) and half-bridge topologies Flexible cooling options: air, water or customized cooling options, high performance cooling, single- and double-sided mounting for water coolers Paralleled operation for even higher output power possible CAN interface to the integrated IGBT driver in SKiiP4 Benefits Reduced design effort thanks to high integration Highest reliability in high power application thanks to sinter technology Highest power density thanks to high performance cooling (HPC) and optional double side mounting HPC Operation comfort and reliability thanks to integrated CAN interface PRODUCT NEWS – SEMIKRON Power Modules PAGE IGBT Modules 54 Full Silicon Carbide Modules 96 Hybrid Silicon Carbide Modules 104 MOSFET Modules 112 Thyristor/Diode Modules 116 Bridge Rectifier Modules 132 1 Scalable without Compromise MiniSKiiP® Short facts Available in six different housings Low cost assembly, high production run rate, high yield Small and compact system designs Excellent reliability and long product life time Up to 110kW Motor Drive power, 300kW Solar inverter power and 100kVA UPS power Key features Solder-free SPRiNG technology for fast and easy assembly Baseplate-less design allows cost efficient designs and high thermal performance Easy and flexible PCB routing, no pin holes required Comprehensive topology portfolio: CIB, bridge rectifier, sixpack, twelvepack, H-bridge, Half-Bridge, 3-level NPC/TNPC/ANPC, boost topologies (boost chopper, Flying Capacitor Boost, Symmetrical Boost) Applications With two decades of field experience and more than 50 million modules in the field, this module platform has proven success­ful in all standard applications. Key applications include motor and servo drives, solar inverters with 1000VDC and 1500VDC, UPS systems and welding machines. Thanks to the excellent reliability of spring contacts, applications such as agricultural vehicles or yaw and pitch drives in wind turbines benefit from MiniSKiiPtechnology as well. Benefits The unique mechanical design offers outstandingly easy assembly and service friendly spring contact technology. Opposed to conventional solder or press-fit modules with specific equipment required (automated presses, wave-soldering machine), no dedicated tools are needed for MiniSKiiPassembly. Instead, one or two screws connect everything from driver to heatsink. Assemble the printed cir­cuit board (PCB), power module and heatsink in one mounting step. With higher flexibility, the PCB no longer needs to holes for solder pins or press-fit connections. The springs connec­ting the PCB and power circuitry are far superior to soldered joints, increasing lifetime under thermal or mechanical stress. Thanks to the high mechanical pressure provided by the springs, achieve an airtight, reliable electrical connection. Product range The MiniSKiiPportfolio ranges from 600V to 1700V and 4A to 600A nominal chip currents. Along with the consolidated IGBT3 and IGBT4 portfolio, the latest IGBT Generation 7 and Silicon Carbide components are also equipped. Motor drive topologies (CIB/sixpack/twelvepack/half-bridge) and accompanying full-, half- and un-controlled rectifiers and choppers. For solar, a full range of NPC, TNPC, symmetrical boost and flying capacitor boost topologies are based on the latest 950V IGBT Generation 7 chipsets. The new generation enables the highest power density in string solar and energy storage inverters. NPC and symmetrical boost topologies for UPS applications, based on fast-switching 650V IGBTs and diodes, enable increased power density up to 100kVA. What’s more, the latest chip technology, such as hybrid silicon carbide power modules, push the efficiency and power density to even higher levels. For fast evaluation, test PCB boards are available for most power modules. All power modules are also available with pre-applied High Performance Thermal Paste, a benchmark thermal interface material. Flexible and high Performance Product for a Comprehensive Portfolio SEMITOP® Portfolio SEMITOP 1, 2, 3, 4 up to 55kW SEMITOP E1/E2 up to 225kW Short facts 12mm module height Reliable solder or press-fit connection Low stray inductance case Optimized thermal performance Key features No baseplate Press-fit and solder terminals Complex configurations possible Different chip technologies and manufacturers available Optimized system costs Applications The SEMITOP family features a cost effective design. This product generation is designed for the low and medium power range of up to 200kW following the latest introduction of the SEMITOP E family. Compact and low inductance design, coupled with the latest chip technologies and different topolo­gies, makes the two platforms suitable for different markets such as UPS, solar, energy storage, motor drives, power supplies and the emerging EV battery charger market. Benefits The SEMITOP platform centers around 12-mm-high modules, covering the low and medium power range, with one or two mounting screws and no baseplate, featuring PCB interface via solder or press-fit pins. The low commutation inductance design and the choice of the latest Si and SiC chip technolo­gies make this product suitable for UPS, solar, energy storage, motor drives, power supplies, welding and the new EV battery charger market. A large variety of configurations is possible within the SEMITOP family, including 3-level (NPC/TNPC) and CIB (converter-inverter-brake) topologies. Product range The SEMITOP portfolio includes fast Si diodes, fast 650V/1200V IGBTs and MOSFETs for high voltage. The latest SiC chip technologies for diodes and MOSFETs can be integrated in the platform, making a lot of different configurations with different chip combinations possible: – Neutral point clamp 3-level configuration (NPC) IGBT and Rectifier Module Family for Solder-Free Mounting SEMiX® Portfolio SEMiX Spring up to 350kW SEMiX 3 Press-Fit up to 400kW SEMiX 5 up to 500kW SEMiX 6 Press-Fit up to 75kW Short facts Low stray inductance case Reliable spring and press-fit connection Flat and compact inverter design Key features Half-bridge, chopper, sixpack and 3-level topologies Isolated copper baseplate using DBC technology Also available with integrated shunt resistor (SEMiX 3 Press-Fit) Multiple IGBT sources Applications SEMiX is a flexible and application-oriented module. On the basis of a scalable platform concept, modern chip technology is integrated into IGBT and rectifier modules which are used in a wide variety of applications, such as AC motor drives, switching power supplies and current source inverters. Other typical applications include uninterruptible power supplies, photovoltaik systems, wind energy and automotive appli-cations. Benefits The half-bridge topologies offer a selection of choices for connection technologies, such as press-fit and spring contact, as well as integration levels. For instance, operational features include current measurement shunts within the power module, plug & play driver solutions and pre-printed Phase Change Material. Shorten time-to-market and development times with these options. The SEMiX family includes uniform IGBT and rectifier housings. All have the same height (17mm) and can be connected by one principle DC-link design. This saves development time and makes a simple, low inductance DC-link profile possible. Spring or press-fit contacts allow for a gate driver mounted directly on top of the module, eliminating the riskof noise on wires or loose connectors. Highly compact, state-of-the-art inverter designs are possible thanks to the flat package and separate AC and DC terminals. Avoid solder joints, use highly reliable spring and press-fit contacts for auxiliary terminals, which offers increased product reliability and lifetime. The solder-free contacts make for quick and easy assembly. Optimize inverter production with a uniform assembly direction (everything top down). This simplifies logistics and reduces manufacturing costs. Product range SEMiX IGBT modules are available in 600V, 1200V and 1700V. Half-bridge, sixpack and chopper topologies are available with a current range from 75A to 700A. Besides IGBT3 and IGBT4 chips, the 1200V range also includes a series with V-IGBT devices and the latest M7 technology. Controlled, half-controlled and uncontrolled rectifier modules with identical footprint are also available. For the latest housing versions, we also offer optional integrated shunt resistors and 3-level topologies (NPC, TNPC or Buck/Boost topologies from 150A to 400A). Low Inductance Package Design Down to 10nH SEMITRANS® Portfolio SEMITRANS 2-9 15kW up to 1MW SEMITRANS 10 500kW up to 2MW SEMITRANS 20 500kW up to 2MW Short facts Safe operation with high DC-link voltages Maximum power output Multiple IGBT sources Key features Half-bridge, Chopper, Single Switch, 3-Level, AC switch Isolated copper baseplate using DBC technology Integrated gate resistor High isolation voltage Available from 600V up to 1700V Applications SEMITRANS power modules are designed for a broad range of applications such as motor drives, regenerative inverters, power supplies or traction applications. The long service life is perfectly suited for ambitious applications such as AC drives, switched reluctance and DC motors. Benefits SEMITRANS 2-9 feature well-proven designs that come from over 30 years of market experience. These packages are still suitable for the latest chips generations, including Silicon Carbide, thanks to its low-inductance design. SEMITRANS 10 takes the power range into the realm of megawatt applications, not only with half-bridges, but also in 3-level topologies for wind and solar applications. SEMITRANS 20 serves low voltage applications with a low inductance and easy-to-parallel power module design. With its advanced technologies such as sin­tered chips and AlCu bond wires, it boasts up to 5 times more lifetime than standard modules. Product range The SEMITRANS family offers a broad range of topologies and power ranges. All the standard voltage classes from 600V to 1700V are available. The current rating ranges from 50A to 1400A. The SEMITRANS package is available as half-bridge, chopper, single switch, 3-level and AC switch. 100% Solder-Free for Maximum Durability SKiM® Portfolio SKiM 4/5 up to 200kW SKiM 63/93 up to 250kW Short facts No solder delamination thanks to sintered chips – SKiM 63/93 1500 temperature cycles without failure – SKiM 63/93 23% more performance with AlCu-bonded diodes and high performance thermal grease Key features Sixpack IGBT module with 3 separate half-bridges – SKiM 63/93 Available in 650V, 1200V and 1700V from 200A to 900A NPC and TNPC configuration – SKiM4/5 1200V/600A also available in buck/boost configuration – SKiM 63/93 Solder-free design for maximum durability – SKiM 63/93 Solder-free module and driver PCB mounting Baseplate-less design Solder version also available for less demanding, cost-sensitive applications Low inductance design thanks to symmetrical layout Hybrid SiC available for maximum efficiency – SKiM 63/93 Applications The high reliability SKiM family meets the demands of automotive applications such as electric powertrains in electric utility vehicles, tractors and heavy-duty construction machinery. It also offers leading-edge performance to super-sport and racecars. The SKiM 4/5 features proven 3-level topologies found in solar and UPS applications. Benefits The SKiM module improves reliability of inverters several times over, even under substantial active and passive temperature swings. In addition to sintered chips, pressure contacts and spring technology, the SKiM63/93 featuring AlCu-bonded diodes and high performance thermal grease. Reach over 23% higher performance with the same chip set or double power cycling capability compared to standard power modules. The SKiM 63/93 portfolio also includes hybrid SiC technology, extending efficiency and switching frequency. Product range The SKiM 4/5 modules are available as sixpack and 3-level (NPC/TNPC) configurations with nominal currents from 200A to 600A. The SKiM 63/93 portfolio includes 650V, 1200V and 1700V sixpack modules from 300A to 900A, reaching 180kW. Buck/boost configurations for 1200V/600A round off the portfolio. Driver solutions and an optimised water cooler are available for fast, user-friendly evaluation. Available paralleling boards allow a powerful, simple half-bridge configuration. Compact Package in Various Configurations SEMIPONT® Short facts Compact packages with screw, fast-on or lead terminals High insulation voltages Diode, thyristor rectifier, rectifier/brake Chopper and AC controller Key features Diode, thyristor rectifier, CB topology and AC switch From 200V up to 1.8 kV blocking voltages From 28A up to 207A Compact packages with screw, fast-on or lead terminals Applications Typical application areas for the broad field of SEMIPONT power bridge rectifiers include AC and DC drives, servo drives, (controlled) field rectifiers for DC motors, (controllable) rectifiers for power supplies, input rectifiers for variable frequency drives, soft motor starters, temperature control, (controlled) battery charger rectifiers, DC motor field controllers, DC motor controllers and DC power supplies. Benefits With blocking voltages up to 1.8kV the SEMIPONT family offers high ruggedness for harsh industrial applications. The different housings with soldered PCB connection allow for compact inverter designs. Product range The SEMIPONT bridge rectifier family is available in various configurations with diode and thyristor rectifiers, CB topology and AC switch. The compact packages ensure quick and easy assembly on heatsinks with connections by PCB, busbars or wires. High blocking voltages of up to 1800V, high ruggedness for harsh industrial applications and high insulation voltages are also realized in these packages. Bipolar Modules from the Market Leader SEMIPACK® Short facts Established thyristor diode package Over 40 years of market experience Wide power and topology range Key features Industrial standard thyristor/diode modules 800V up to 2200V 18A up to 1360A Uncontrolled, half-controlled and full-controlled rectifiers Single thyristors and diodes Applications The target applications for the thyristor, thyristor/diode or dio­de modules include input rectifiers (single-phase, three-phase, uncontrolled, half-controlled or full-controlled) for inverters or UPS systems, soft start applications and control systems. Benefits SEMIPACK delivers a well-established industrial standard with regard to footprint and module outline. Thanks to the com­prehensive product range, the ideal solution can be found for any application. With SemiSel, the free online calculation and simulation tool for losses and temperature, the power electro­nic system developer can make the right power module choice. Product range The SEMIPACK product line is a comprehensive product range with six module lines covering voltage classes from 800V to 2200V, insulation voltages of 3.6kV, 4.8kV@1s and rated cur­rents from 18A to 1360A. The SEMIPACK product line includes uncontrolled, half-controlled and full-controlled rectifier modu­les. Also available are custom topologies, single thyristor or diode modules and SEMIPACK modules featuring fast switching diodes for dedicated applications. The SEMIPACK FAST product line covers a current range from 40A to 600A with voltage classes from 600V to 1700V. The portfolio of the SEMIPACK product line is extended continuously to meet market requirements. Compact Soft-Starter Module SEMiSTART® Short facts Double-sided cooling for high load cycle capability Robust pressure contact technology Low thermal resistance Key features From 560A to 3080A overload current Qualified Plug-and-Play subsystem Excellent thermal performance Applications As an anti-parallel thyristor module, SEMiSTART is ideal for soft-start applications. Benefits SEMiSTART is a family of power modules with integrated heatsink for ultra-compact designs in soft-start applications. Double-sided cooling and pressure contact technology allow for high current capability with overload up to 3080A for 20s duration. SEMiSTART is a robust Plug-and-Play subsystem that helps cut development time and system costs. Product range SEMiSTART power modules are available in three housing sizes for overload currents ranging from 560A to 3080A. All overload current classes are available for voltages of 1400V and 1800V. IGBT Modules For Maximum Performance SEMIKRON offers IGBT modules in SEMITRANS, SEMiX, SKiM, MiniSKiiPand SEMITOP packages in various topologies, current ratings and voltage ratings. From 4A up to 1400A, with voltage classes from 600V to 1700V, the IGBT modules are used in a variety of applications. They feature key technologies such as sintering and spring or press-fit contacts for quick and easy assembly. Available topologies include CIB (converter inverter brake), half-bridge, H-bridge, sixpack, 3-level and many more, covering every application field. Featuring the latest IGBT chips in combination with SEMIKRON’s CAL diode technology. The latest IGBT Generation 7 is now also available in SEMIKRON power modules. It provides higher power densities and provides the new benchmark, especially in motor drive and solar applications. Generation 7 IGBT Optimized IGBTs for motor drive applications MiniSKiiP56 SEMITOP 64 SEMiX 74 SEMITRANS SKiM 4/5 91 SKiM 63/93 Sixpack Chopper IGBT Modules / MiniSKiiP SKiiP02AC066V1 20 10 1.45 0.45 0.3 20 1.30 0.3 -II 0 P12, HPTP SKiiP15AC066V1 40 30 1.45 1 1.1 39 1.50 1.1 -II 1 P12, HPTP SKiiP01NEC066V3 12 6 1.45 0.3 0.2 12 1.30 0.2 220 II 0 P12, HPTP SKiiP03NEC066V3 27 15 1.45 0.6 0.5 28 1.40 0.5 220 II 0 P12, HPTP SKiiP02NAC066V3 20 10 1.45 0.5 0.3 20 1.30 0.5 220 II 0 P12, HPTP SKiiP03NEB066V3 27 15 1.45 0.6 0.5 28 1.40 0.5 220 II 0 P12, HPTP SKiiP11HEB066V1 27 15 1.50 0.6 0.5 28 1.40 0.5 370 II 1 P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 56 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material A A V mJ mJ A V mJ A Topology 650V – IGBT3 (Trench) SKiiP24GB07E3V1 2) 184 150 1.45 2.2 5.1 161 1.54 3.7 – II 2 P12, HPTP SKiiP26GB07E3V1 2) 229 200 1.45 4.4 7.4 235 1.40 4.5 – II 2 P12, HPTP SKiiP38GB07E3V1 2) 287 300 1.45 5.5 10.6 310 1.40 5.1 – II 3 P12, HPTP SKiiP26MLI07E3V1 2) 98 75 1.45 2.8 2.8 75 1.54 1.4 – II 2 P12, HPTP SKiiP27MLI07E3V1 2) 109 100 1.45 4.2 4.2 107 1.40 3.5 – II 2 P12, HPTP SKiiP28MLI07E3V1 2) 135 150 1.45 5.5 5.6 126 1.40 5.5 – II 2 P12, HPTP SKiiP39MLI07E3V1 2) 159 200 1.45 3.6 8.9 163 1.39 8.3 – II 3 P12, HPTP 1200V – IGBT3 (Trench) SKiiP03AC126V1 3) 16 8 1.70 0.9 0.9 8 1.90 0.7 – II 0 P12, HPTP SKiiP11AC126V1 3) 16 8 1.70 0.9 1 14 1.90 0.9 – II 1 P12, HPTP SKiiP11AC126V10 3) 16 6 1.65 18 1 48 1.10 16.4 – II 1 P12, HPTP SKiiP12AC126V1 3) 28 15 1.70 1.7 1.9 26 1.60 1.2 – II 1 P12, HPTP SKiiP13AC126V1 3) 41 25 1.70 4.1 3.1 30 1.80 2.2 – II 1 P12, HPTP SKiiP13AC126V20 3) 41 25 1.65 2.9 3 27 2.40 1.2 – II 1 P12, HPTP SKiiP23AC126V1 3) 41 25 1.70 3.7 3.1 30 1.80 2.6 – II 2 P12, HPTP SKiiP24AC126V1 3) 52 35 1.70 4.2 4.4 38 1.80 3.5 – II 2 P12, HPTP SKiiP25AC126V1 3) 73 50 1.70 5.8 6.5 62 1.60 5.1 – II 2 P12, HPTP SKiiP26AC126V1 3) 88 70 1.70 9 7.7 91 1.50 7.5 – II 2 P12, HPTP SKiiP37AC126V2 3) 97 75 1.70 9.6 8.7 90 1.60 9.6 – II 3 P12, HPTP SKiiP38AC126V2 3) 118 105 1.70 13.1 13 118 1.60 11.2 – II 3 P12, HPTP SKiiP39AC126V2 3) 157 140 1.70 19.9 17.2 167 1.50 16.2 – II 3 P12, HPTP SKiiP39AC126V20 3) 157 140 1.65 13 17 – 2.00 8.1 – II 3 P12, HPTP SKiiP03NAC126V1 3) 16 8 1.70 0.9 0.9 14 1.60 0.7 220 II 0 P12, HPTP SKiiP11NAB126V1 3) 16 8 1.70 0.8 1 14 1.90 0.9 220 II 1 P12, HPTP SKiiP12NAB126V1 3) 28 15 1.70 2 1.9 26 1.60 1.3 220 II 1 P12, HPTP SKiiP12NAB126V20 3) 28 15 1.65 1.5 1.8 28 2.45 0.9 220 II 1 P12, HPTP SKiiP22NAB126V10 3) 28 15 1.65 2 1.9 28 1.60 1.1 700 II 2 P12, HPTP SKiiP23NAB126V1 3) 41 25 1.70 3.5 3 30 1.80 2.5 370 II 2 P12, HPTP SKiiP23NAB126V10 3) 41 25 1.70 3.5 3 30 1.80 2.5 635 II 2 P12, HPTP SKiiP23NAB126V20 3) – 25 1.65 2.7 2.9 41 2.40 1.2 370 II 2 P12, HPTP SKiiP24NAB126V1 3) 52 35 1.70 4.6 4 38 1.80 3.3 370 II 2 P12, HPTP SKiiP24NAB126V10 3) 52 35 1.70 4.6 4 38 1.80 3.3 635 II 2 P12, HPTP SKiiP35NAB126V1 3) 73 50 1.70 6.5 6.1 62 1.60 4.7 700 II 3 P12, HPTP SKiiP35NAB126V10 3) 72 50 1.70 6.5 6.1 60 1.67 4.7 850 II 3 P12, HPTP SKiiP36NAB126V1 3) 88 70 1.70 9 7.7 91 1.50 7.5 700 II 3 P12, HPTP SKiiP36NAB126V10 3) 92 80 1.70 9 7.7 87 1.64 7.5 850 II 3 P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs SEMIKRON 57 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1 1200V – IGBT4 (Trench) SKiiP11AC12T4V1 SKiiP12AC12T4V1 SKiiP13AC12T4V1 A 12 18 41 A 8 15 25 V 1.85 1.85 1.85 mJ 0.87 1.65 3.7 mJ 0.75 1.5 2.4 A 15 23 32 V 2.33 2.38 2.41 mJ 0.53 0.79 1.64 A — II 1 II 1 II 1 P12, HPTP P12, HPTP P12, HPTP Topology SKiiP23AC12T4V1 SKiiP24AC12T4V1 SKiiP25AC12T4V1 41 52 68 25 35 50 1.85 1.85 1.85 3.7 3.7 6 2.4 3 4.5 32 44 60 2.41 2.30 2.22 1.64 2.3 3.2 — II 2 II 2 II 2 P12, HPTP P12, HPTP P12, HPTP SKiiP25AC12T4V25 2) 68 50 1.85 3.4 3.1 60 2.22 2.9 – II 2 P12, HPTP SKiiP26AC12T4V1 SKiiP37AC12T4V1 SKiiP38AC12T4V1 SKiiP39AC12T4V1 90 90 115 165 70 75 100 150 1.85 1.85 1.80 1.85 9.5 11.5 13.7 22.5 7.1 6.8 9.7 14 83 83 100 136 2.17 2.17 2.20 2.14 5.6 5.5 6.5 11.4 —- II 2 II 3 II 3 II 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP SKiiP39AC12T4V10 165 150 1.85 22.5 14 136 2.14 11.4 – II 3 P12, HPTP SKiiP39AC12T4V21 2) 189 150 1.85 22.5 14 149 2.14 11.4 – II 3 P12, HPTP SKiiP12ACC12T4V10 2) 28 15 1.85 2.1 1.6 23 2.38 0.8 60 II 1 P12, HPTP SKiiP23ACC12T4V10 2) SKiiP24ACC12T4V10 2) 41 52 25 35 1.85 1.85 3.5 3.9 2.7 3.5 32 44 2.41 2.30 1.15 2.3 65 100 II 2 II 2 P12, HPTP P12, HPTP SKiiP24ACC12T4V1 2) 38 25 1.85 3.2 3 31 2.41 1.4 – II 2 P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 58 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1200V – IGBT4 (Trench) SKiiP39GA12T4V1 2) A 165 A 150 V 1.85 mJ 22.5 mJ 14 A 136 V 2.14 mJ 11.4 A – II 3 P12, HPTP Topology SKiiP24GB12T4V1 2) SKiiP26GB12T4V1 2) SKiiP38GB12E4V1 2) SKiiP39GB12E4V1 2) 168 224 329 389 150 200 300 400 1.85 1.80 1.85 1.80 10.8 13.6 19.1 20.8 15.6 22.1 34.6 49.7 157 194 267 363 2.17 2.20 2.20 2.20 10.3 13.4 21.5 30.2 —- II 2 II 2 II 3 II 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP SKiiP39TMLI12T4V2 2) 235 200 1.80 7.5 12.8 194 2.20 9.7 – II 3 P12, HPTP SKiiP39MLI12T4V1 2) 157 150 1.85 17 15 120 2.14 13 – II 3 P12, HPTP SKiiP02NAC12T4V1 SKiiP03NAC12T4V1 6 7.5 4 8 1.85 1.85 0.66 0.9 0.37 0.7 7.5 9 1.82 2.33 0.34 0.5 220 220 II 0 II 0 P12, HPTP P12, HPTP SKiiP10NAB12T4V1 SKiiP11NAB12T4V1 SKiiP12NAB12T4V1 SKiiP22NAB12T4V2 2) 6 18 28 27 4 8 15 15 1.85 1.85 1.85 1.85 0.66 0.87 1.4 1.5 0.37 0.74 1.3 1.54 7.5 15 23 22 1.82 2.33 2.38 2.38 0.34 0.57 1.1 0.95 220 220 220 220 II 1 II 1 II 1 II 2 P12, HPTP P12, HPTP P12, HPTP P12, HPTP SKiiP23NAB12T4V1 SKiiP23NAB12T4V10 37 37 25 25 1.85 1.85 2.65 2.65 2.3 2.3 32 30 2.41 2.41 1.6 1.6 370 700 II 2 II 2 P12, HPTP P12, HPTP SKiiP23NAB12T4V2 2) 37 25 1.85 3.1 2.56 32 2.41 1.4 370 II 2 P12, HPTP SKiiP24NAB12T4V1 SKiiP24NAB12T4V10 48 48 35 35 1.85 1.85 4.3 4.3 3.25 3.25 44 44 2.30 2.30 2.4 2.4 370 700 II 2 II 2 P12, HPTP P12, HPTP SKiiP24NAB12T4V4 2) 48 35 1.85 4.3 3.25 40 2.30 2.4 370 II 2 P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs SEMIKRON 59 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material A A V mJmJA VmJ A Topology 1200V – IGBT4 (Trench) SKiiP35NAB12T4V1 68 50 1.85 6 4.7 60 2.22 3.4 700 II 3 P12, HPTP SKiiP37NAB12T4V10 90 75 1.85 9.7 6.8 83 2.17 4.9 850 II 3 P12, HPTP 1200V – IGBT4 (Fast Trench) 1200V – IGBT7 (Trench) Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 60 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1200V – IGBT7 (Trench) SKiiP23AC12T7V1 2) SKiiP24AC12T7V1 2) SKiiP25AC12T7V1 1) SKiiP27AC12T7V1 2) SKiiP28AC12T7V1 1) SKiiP37AC12T7V1 2) SKiiP38AC12T7V1 1) SKiiP39AC12T7V1 2) SKiiP39AC12T7V10 1) SKiiP11ACC12T7V1 1) A 33 42 56 72 89 76 95 135 160 20 A 25 35 50 75 100 75 100 150 200 10 V 1.60 1.60 1.55 1.55 1.55 1.55 1.55 1.55 1.55 1.60 mJ 3.1 4.4 6.2 9.3 10 9.3 10 12 16 1.1 mJ 2.8 3.9 5.5 8.1 11 8.1 11 17 23 1.1 A 24 33 45 61 61 65 76 103 103 13 V 2.41 2.30 2.22 2.17 2.46 2.17 2.20 2.14 2.42 2.59 mJ 1.4 2 2.9 4.3 5.7 4.3 5.7 8.6 11 0.56 A ———36 II 2 II 2 II 2 II 2 II 2 II 3 II 3 II 3 II 3 II 1 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP Topology SKiiP23ACC12T7V1 2) SKiiP24ACC12T7V1 2) 33 42 25 35 1.60 1.60 2.8 4 2.8 3.9 24 33 2.41 2.30 1.4 2.1 100 170 II 2 II 2 P12, HPTP P12, HPTP SKiiP35ACC12T7V1 1) SKiiP37ACC12T7V1 1) 60 76 50 75 1.55 1.55 5.7 8.5 5.5 8.1 48 65 2.22 2.17 3 4.5 270 430 II 3 II 3 P12, HPTP P12, HPTP SKiiP24GB12T7V1 2) SKiiP26GB12T7V1 1) SKiiP27GB12T7V1 1) SKiiP38GB12T7V1 2) SKiiP39GB12T7V1 1) 137 160 188 276 294 150 200 300 300 400 1.55 1.55 1.50 1.55 1.55 11 14 21 23 39 17 23 36 36 48 109 125 157 211 232 2.17 2.20 2.14 2.20 2.20 11 13 19 18 23 —– II 2 II 2 II 2 II 3 II 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP SKiiP39GA12T7V1 1) 135 150 1.55 12 17 103 2.14 8.6 – II 3 P12, HPTP SKiiP11NAB12T7V1 2) SKiiP12NAB12T7V1 2) SKiiP13NAB12T7V1 1) 20 26 37 10 15 25 1.60 1.60 1.60 1.1 1.7 2.8 1.1 1.7 2.8 13 19 27 2.59 2.38 2.41 0.56 0.86 1.4 220 220 220 II 1 II 1 II 1 P12, HPTP P12, HPTP P12, HPTP SKiiP23NAB12T7V1 2) SKiiP24NAB12T7V1 2) SKiiP25NAB12T7V1 1) 33 42 56 25 35 50 1.60 1.60 1.55 2.8 4 5.7 2.8 3.9 5.5 24 33 45 2.41 2.30 2.22 1.4 2.1 3 370 370 635 II 2 II 2 II 2 P12, HPTP P12, HPTP P12, HPTP SKiiP34NAB12T7V1 2) 45 35 1.60 4 SKiiP35NAB12T7V1 1) 60 50 1.55 5.7 SKiiP37NAB12T7V1 2) 76 75 1.55 8.5 SKiiP38NAB12T7V1 1) 99 100 1.55 9.4 SKiiP39NAB12T7V1 1) 110 150 1.50 12 Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 3.9 5.5 8.1 11 17 35 48 65 72 83 2.30 2.22 2.17 2.20 2.28 2.1 3 4.5 6 8.6 370 635 635 1000 1000 II 3 II 3 II 3 II 3 II 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP SEMIKRON 61 IGBT Modules / MiniSKiiP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material A A V mJmJA VmJ A Topology 1700V – IGBT3 (Trench) 1700V – IGBT4 (Trench) Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 62 IGBT Modules / MiniSKiiP Packages MiniSKiiPII 0 MiniSKiiPII 1 MiniSKiiPII 2 MiniSKiiPII 3 Dimensions in mm SEMIKRON 63 IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1 600V – IGBT3 (Trench) sk75 GB 066 T sk100 GB 066 T sk150 GB 066 T sk30 GBB 066 T sk50 GBB 066 T sk75 GBB 066 T A 77 96 124 40 60 77 A 75 100 150 30 50 75 V 1.45 1.45 1.45 1.45 1.45 1.45 mJ 3.1 7 6.25 0.97 2.2 3.1 mJ 2.8 6 5.7 1.77 1.73 2.8 A 62 108 135 36 56 77 V 1.35 1.35 1.35 1.45 1.50 1.35 mJ 0.85 1.7 1.7 0.26 0.72 0.85 A —— 3 3 3 3 3 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP Topology sk15 GH 066 2) 24 15 1.45 0.3 0.35 32 1.23 0.26 – 2 P12, HPTP sk20 GD 066 ET sk30 GD 066 ET 30 40 20 30 1.45 1.45 0.34 0.97 0.63 1.77 31 36 1.45 1.45 0.2 0.26 — 3 3 P12, HPTP P12, HPTP sk30 GD 066 ETp 2) 40 30 1.45 0.97 1.77 36 1.45 0.26 – 3p P12, HPTP sk50 GD 066 ET 60 50 1.45 2.2 1.73 56 1.40 0.72 – 3 P12, HPTP sk50 GD 066 ETp 2) 59 50 1.45 2.2 1.73 52 1.47 0.72 – 3p P12, HPTP sk75 GD 066 T sk100 GD 066 T sk150 GD 066 T sk200 GD 066 T 83 105 151 174 75 100 150 200 1.45 1.45 1.45 1.45 3.1 7 6.25 13.9 2.8 6 5.7 12 92 99 198 99 1.35 1.30 1.30 1.30 0.85 1.7 1.7 3.4 —- 4 4 4 4 P12, HPTP P12, HPTP P12, HPTP P12, HPTP sk20 DGDL 066 ET sk30 DGDL 066 ET 30 40 20 30 1.45 1.45 0.3 0.55 0.6 1.15 27 36 1.40 1.50 0.2 0.53 220 370 3 3 P12, HPTP P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 64 IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 600V – IGBT3 (Trench) sk50 DGDL 066 T A 69 A 50 V 1.45 mJ 2.2 mJ 1.74 A 54 V 1.35 mJ 0.73 A 370 4 P12, HPTP Topology SK50DGDL066ETE2 1) 58 50 1.45 0.85 1.6 57 1.00 0.9 520 E2 HPTP, HT sk75 DGDL 066 T 3) sk100 DGDL 066 T 81 106 75 100 1.45 1.45 3.1 4.4 2.8 3.5 64 99 1.35 1.10 0.9 1.45 700 700 4 4 P12, HPTP P12, HPTP sk20 MLI 066 sk30 MLI 066 sk30 MLI 066p 1) sk50 MLI 066 sk75 MLI 066 T sk100 MLI 066 T sk150 MLI 066 T 650V – IGBT3 (Trench) SK20GD07E3ETE1 1) SK30GD07E3ETE1 1) SK50GD07E3ETE1 2) SK75GD06E3ETE2 1) 30 40 37 60 83 105 151 27 38 60 74 20 30 30 50 75 100 150 20 30 50 75 1.45 1.45 1.45 1.45 1.45 1.45 1.45 1.45 1.45 1.45 1.45 0.4 0.97 0.97 1.46 1.7 2.5 2.7 0.37 0.51 1.4 2 1.07 1.77 1.77 2.02 2.8 4.2 5.9 0.67 1.01 1.3 2.8 30 37 34 56 92 110 115 33 33 66 51 1.60 1.50 1.50 1.50 1.50 1.35 1.50 1.41 1.60 1.37 1.50 0.2 0.26 0.26 1.07 1.1 1.9 2.6 0.13 0.17 0.8 1.45 ———– 3 3 3p 3 4 4 4 E1 E1 E1 E2 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP HPTP, HT HPTP, HT HPTP, HT HPTP, HT SK10DGDL07E3ETE1 1) SK15DGDL07E3ETE1 1) SK20DGDL07E3ETE1 1) SK30DGDL07E3ETE1 1) 650V – IGBT3 (Fast Trench) sk100 GD 07F3 TD1 2) 17 22 27 38 105 10 15 20 30 100 1.45 1.45 1.45 1.45 1.85 0.18 0.28 0.37 0.51 3.92 0.33 0.51 0.67 1.01 2.1 33 33 33 33 95 1.23 1.32 1.41 1.60 1.35 0.09 0.11 0.13 0.17 0.92 220 220 370 370 – E1 E1 E1 E1 4 HPTP, HT HPTP, HT HPTP, HT HPTP, HT P12, HPTP sk50 MLI 07F3 D1p 1) 51 50 1.85 1 1.18 56 1.37 0.95 – 3p P12, HPTP sk100 MLI 07F3 TD1p sk150 MLI 07F3 TD1p 110 152 100 150 1.85 1.85 4.6 9.07 1 1.3 137 137 1.37 1.37 1.76 1.76 — 4p 4p P12, HPTP P12, HPTP sk150 DBB 07F3 TD1p sk100 DBB 07F3 TD1p 73 54 150 100 1.85 1.85 1.52 1 0.65 0.5 108 115 1.35 1.35 0.9 0.7 — 4p 4p P12, HPTP P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs SEMIKRON 65 IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1 650V – IGBT3 (Fast Trench) sk151 GALE 07F3 TUF 2) A 145 A 150 V 1.85 mJ 8.8 mJ 4 A 116 V 1.59 mJ 0.26 A 635 3 P12, HPTP Topology 650V – IGBT H5 (High speed Trench5 technology) SK225GH07H5TD1E2 1) 162 225 1.65 1.85 1.25 63 1.35 0.7 – E2 HPTP, HT 650V-IGBT S5 (High Speed Soft Switching) SK75GARL07S5TD1E1 1) 65 75 1.42 1.15 1.46 63 1.35 0.98 – E1 HPTP, HT SK50MLID07S5TD1E2 51 50 1.35 1.1 0.6 47 1.35 0.6 – E2 HPTP, HT SK75MLI07S5TD1E1 2) SK100MLI07S5TD1E2 2) SK150MLI07S5TD1E2 2) SK200MLI07S5SCTE2 1) 70 96 127 149 75 100 150 200 1.42 1.35 1.42 1.45 1.15 0.36 0.54 3.16 1.46 1.63 2.45 1.45 53 107 107 94 1.35 1.55 1.55 1.35 1.25 1.77 1.55 – —- E1 E2 E2 E2 HPTP, HT HPTP, HT HPTP, HT HPTP, HT 1200V – IGBT3 (Trench) sk10 GD 126 ET 3) sk15 GD 126 ET 3) sk25 GD 126 ET 3) sk35 GD 126 ET 3) 15 22 32 40 8 15 25 35 1.70 1.70 1.70 1.70 1 2 3.3 4.6 1 1.8 3.1 4.3 25 25 28 34 1.90 1.60 1.80 1.80 1.4 1.4 2.1 2.9 —- 3 3 3 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP sk10 DGDL 126 ET 3) sk15 DGDL 126 ET 3) 15 22 8 15 1.70 1.70 1 2 1 1.8 25 25 1.90 1.60 1.4 1.1 220 220 3 3 P12, HPTP P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 66 IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material A A V mJ mJ A VmJ A Topology 1200V – IGBT4 (Trench) sk200 GB 12T4 Tp 1) 209 200 1.80 13.6 22.1 190 2.20 13.4 -4p P12, HPTP sk150 GAH 12T4 Tp 1) 165 150 1.85 10.8 15.6 33 2.33 0.82 -4p P12, HPTP sk25 GH 12T4 35 25 1.85 2.27 2.7 28 2.41 1.28 -3 P12, HPTP sk50 GH 12T4 T 75 50 1.80 8.3 5 56 2.20 2.15 -4 P12, HPTP sk100 GH 12T4 T 126 100 1.80 16.6 10 102 2.20 5.2 -4 P12, HPTP sk35 MLI 12T4 p 1) 43 35 1.85 1.6 3.27 38 2.30 1.73 -3p P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1 1200V – IGBT4 (Trench) sk70 MLI 12T4 Tp 2) A 98 A 70 V 1.85 mJ 5.5 mJ 6.5 A 78 V 2.30 mJ 3.3 A – 4p P12, HPTP Topology sk10 GD 12T4 ET sk15 GD 12T4 ET sk25 GD 12T4 ET 17 27 37 8 15 25 1.85 1.85 1.85 0.41 0.83 2.27 0.76 1.52 2.7 15 21 30 2.38 2.38 2.40 0.41 0.82 1.28 — 3 3 3 P12, HPTP P12, HPTP P12, HPTP sk25 GD 12T4 ETp 1) 35 25 1.85 2.27 2.7 28 2.41 1.28 – 3p P12, HPTP sk35 GD 12T4 ET 44 35 1.85 3.27 3.3 40 2.30 1.46 – 3 P12, HPTP sk50 GD 12T4 T sk50 GD 12T4 Tp sk75 GD 12T4 T sk75 GD 12T4 Tp 1) sk100 GD 12T4 T sk10 DGDL 12T4 ET sk15 DGDL 12T4 ET 75 72 102 97 126 17 27 50 50 75 75 100 8 15 1.85 1.85 1.85 1.85 1.85 1.85 1.85 8.3 8.3 13.6 13.6 16.6 0.41 0.82 5 5 8.2 8.2 10 0.75 1.52 60 60 83 83 102 15 21 2.20 2.22 2.20 2.17 2.25 2.38 2.38 2.15 2.15 3.38 3.38 5.2 0.41 0.82 —–220 220 4 4p 4 4p 4 3 3 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP sk25 DGDL 12T4 T sk35 DGDL 12T4 T sk50 DGDL 12T4 T 45 58 75 25 35 50 1.85 1.85 1.85 2.27 3.27 8.3 2.7 3.3 5 30 46 60 2.40 2.30 2.22 -1.46 2.15 370 370 700 4 4 4 P12, HPTP P12, HPTP P12, HPTP SK10DGDL12T4ETE12) SK15DGDL12T4ETE12) SK25DGDL12T4ETE2V12) SK35DGDL12T4ETE2V12) SK25GD12T4ETE12) SK35GD12T4ETE12) SK50GD12T4ETE22) SK75GD12T4ETE22) 16 26 38 49 38 49 65 88 8 15 25 35 25 35 50 75 1.85 1.85 1.85 1.85 1.85 1.85 1.85 1.85 0.87 1.09 2.08 2.52 1.94 2.61 4.8 6.62 0.6 0.93 2.28 3.11 1.87 2.85 5 7.11 34 34 47 47 30 41 56 79 1.00 1.00 1.00 1.00 2.41 2.30 2.22 2.17 0.82 0.49 0.49 0.49 1.48 2.27 2.89 4.41 –370 370 —- E1 E1 E2 E2 E1 E1 E2 E2 HPTP, HT HPTP, HT HPTP, HT HPTP, HT HPTP, HT HPTP, HT HPTP, HT HPTP, HT 1200V – IGBT4 (Fast Trench) sk120 GB 12F4 T 1) 174 120 2.05 8.8 7.47 29 2.38 2.04 – 3 P12, HPTP Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 68 IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material A A V mJ mJ A VmJ A Topology 1200V – IGBT4 (Fast Trench) 1200V – NPT IGBT (Ultrafast) Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITOP Type IGBT Diode Rectifier Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err IFSM @ Tj = 25°C Package Thermal Interface Material 1 A A V mJ mJ A V mJ A Topology 1200V – IGBT7 (Trench) SK10DGDL12T7ETE12) 22 10 1.60 0.74 1.26 15 2.59 0.91 220 E1 HPTP, HT SK10DGDL12T7ETE1s2) 22 10 1.60 0.74 1.26 15 2.59 0.91 220 E1 Solder HPTP, HT SK15DGDL12T7ETE12) 28 15 1.60 1.16 1.71 21 2.38 0.97 220 E1 HPTP, HT SK15DGDL12T7ETE1s2) 28 15 1.60 1.16 1.71 21 2.38 0.97 220 E1 Solder HPTP, HT SK25DGDL12T7ETE12) 41 25 1.60 2.06 2.71 21 2.38 1.17 370 E1 HPTP, HT SK25DGDL12T7ETE1s2) 41 25 1.60 2.06 2.71 21 2.38 1.17 370 E1 Solder HPTP, HT SK25DGDL12T7ETE22) 41 25 1.60 2.42 2.71 30 2.41 1.61 370 E2 HPTP, HT SK25DGDL12T7ETE2s2) 41 25 1.60 2.42 2.71 30 2.41 1.61 370 E2 Solder HPTP, HT SK35DGDL12T7ETE22) 51 35 1.60 3.52 3.74 41 2.30 2.39 370 E2 HPTP, HT SK35DGDL12T7ETE2s2) 51 35 1.60 3.52 3.74 41 2.30 2.39 370 E2 Solder HPTP, HT SK50DGDL12T7ETE22) 67 50 1.55 4.59 5.28 41 2.73 2.41 520 E2 HPTP, HT SK50DGDL12T7ETE2s2) 67 50 1.55 4.59 5.28 41 2.73 2.41 520 E2 Solder HPTP, HT SK25GD12T7ETE12) 41 25 1.60 2.42 2.71 30 2.41 1.61 – E1 HPTP, HT SK35GD12T7ETE12) 51 35 1.60 3.52 3.74 41 2.30 2.39 – E1 HPTP, HT SK50GD12T7ETE12) 67 50 1.55 4.59 5.28 41 2.73 2.41 – E1 HPTP, HT SK75GD12T7ETE22) 91 75 1.55 6.66 8.37 79 2.17 6.44 – E2 HPTP, HT SK100GD12T7ETE22) 114 100 1.55 7.34 10.15 93 2.20 7.89 – E2 HPTP, HT Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITOP Packages 7.97408 SEMITOP 2 8.08732 8.07255 SEMITOP 3 SEMITOP 3 Press-Fit 6.59769 6.58582 8.07333 8.07244 SEMITOP 4 SEMITOP 4 Press-Fit 7.58046 7.58047 Dimensions in mm SEMIKRON 71 IGBT Modules / SEMITOP Packages SEMITOP E1 SEMITOP E2 Dimensions in mm 72 IGBT Modules / SEMITOP Packages SEMITOP E1s SEMITOP E2s Dimensions in mm SEMIKRON 73 IGBT Modules / SEMiX Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJmJ A VmJ Topology 600V – IGBT3 (Trench) SEMiX302GB066HDs 379 300 1.45 12 15 419 1.40 7.5 2s P8, HT SEMiX603GB066HDs 720 600 1.45 12 43 771 1.40 13 3s P8, HT 650V – IGBT4 (Trench) SEMiX453GB07E3p 558 450 1.45 8 20 591 1.40 9 3p P8, HT 1200V – V-IGBT SEMiX151GB12Vs 231 150 1.75 19 17 189 2.14 12 1s ­ SEMiX302GB12Vs 448 300 1.75 37 36 356 2.14 22 2s P8, HT SEMiX453GB12Vs 673 450 1.75 40 54 516 2.14 33 3s P8, HT SEMiX604GB12Vs 880 600 1.75 59 79 707 2.14 50 4s P8, HT Footnotes: 1) Sample status / 2) In production new 74 IGBT Modules / SEMiX Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJmJ A VmJ Topology 1200V – V-IGBT 1200V – IGBT4 (Trench) SEMiX302GAL12E4s 463 300 1.80 30 44 356 2.14 19 2s P8, HT SEMiX603GAL12E4p 1110 600 1.80 59 76 856 2.08 33 3p P8, HT SEMiX151GAR12E4s 232 150 1.80 17 18 189 2.14 8.9 1s ­ SEMiX453GAR12E4s 683 450 1.80 45 67 544 2.14 28 3s P8, HT SEMiX604GAR12E4s 916 600 1.80 35 110 707 2.14 44 4s P8, HT SEMiX202GB12E4s 312 200 1.80 22 28 229 2.20 12 2s P8, HT SEMiX302GB12E4s 463 300 1.80 30 44 356 2.14 19 2s P8, HT SEMiX303GB12E4s 466 300 1.80 30 41 338 2.20 18 3s P8, HT SEMiX453GB12E4p 678 450 1.80 32 57 578 2.14 30 3p P8, HT SEMiX603GB12E4p 1110 600 1.80 69 80 856 2.08 40 3p P8, HT SEMiX303GB12E4I50p 2) 469 300 1.80 22 37 378 2.20 23 3Ip P8, HT SEMiX453GB12E4I33p 2) 678 450 1.80 33 57 578 2.14 39 3Ip P8, HT SEMiX603GB12E4I25p 2) 1110 600 1.80 63 80 856 2.08 40 3Ip P8, HT SEMiX205TMLI12E4B 2) 318 200 1.80 5 4 229 2.20 5.9 5 P8, HT SEMiX405TMLI12E4B 2) 636 400 1.80 38 29 461 2.20 18 5 P8, HT Footnotes: 1) Sample status / 2) In production new IGBT Modules / SEMiX Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material 1 1200V – IGBT4 (Trench) SEMiX205GD12E4 2) A 313 A 200 V 1.80 mJ 14 mJ 23 A 224 V 2.20 mJ 16 5 P8, HT Topology SEMiX223GD12E4c SEMiX303GD12E4c SEMiX453GD12E4c 333 466 683 225 300 450 1.85 1.80 1.80 22 29 52 31 42 68 270 338 544 2.17 2.20 2.14 17 23 28 33c 33c 33c P8 P8 P8 1200V – IGBT4 (Fast Trench) SEMiX155GD12T4 1) 219 150 1.80 13 21 175 2.14 14 5 P8, HT SEMiX106GD12T4p1) SEMiX156GD12T4p1) SEMiX206GD12T4p1) 167 239 314 100 150 200 1.80 1.80 1.80 8 11 19 11.5 17 20 121 181 217 2.20 2.14 2.21 6.5 11.5 14.5 6p 6p 6p HT HT HT 1200V – IGBT3 (Trench) SEMiX452GAL126HDs 455 300 1.70 35 45 394 1.60 33 2s P8, HT SEMiX252GB126HDs SEMiX703GB126HDs SEMiX904GB126HDs 242 642 821 150 450 600 1.70 1.70 1.70 20 32 60 21 68 88 228 561 752 1.60 1.60 1.60 18 60 75 2s 3s 4s P8, HT P8, HT P8, HT SEMiX101GD126HDs SEMiX151GD126HDs 129 168 75 100 1.70 1.70 10 12 11 14 117 152 1.60 1.60 9 12 13 13 P8 P8 SEMiX503GD126HDc SEMiX703GD126HDc 466 642 300 450 1.70 1.70 28 32 44 68 412 561 1.60 1.59 33 60 33c 33c P8 P8 1200V – M7 SEMiX223GB12M7p 2) SEMiX303GB12M7p 2) SEMiX453GB12M7p 2) SEMiX603GB12M7p 2) SEMiX703GB12M7p 2) SEMiX355MLI12M7 2) 336 433 601 774 863 448 225 300 450 600 700 350 1.56 1.55 1.55 1.54 1.55 1.59 15 15 39 50 83 13 24 32 49 65 77 37 300 361 554 656 796 344 2.17 2.20 2.14 2.21 2.20 2.28 18 27 35 50 50 26 3p 3p 3p 3p 3p 5 P8, HT P8, HT P8, HT P8, HT P8, HT P8, HT Footnotes: 1) Sample status / 2) In production new 76 SEMIKRON IGBT Modules / SEMiX Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJmJ A VmJ Topology SEMiX202GB17E4s 321 200 1.90 75 82 213 2.00 55 2s P8, HT SEMiX302GB17E4s 491 300 1.90 140 122 324 1.98 70 2s P8, HT SEMiX303GB17E4p 487 300 1.90 76 99 349 2.00 59 3p P8, HT SEMiX453GB17E4p 697 450 1.90 131 146 557 1.98 72 3p P8, HT SEMiX603GB17E4p 981 600 1.95 125 200 794 1.88 120 3p P8, HT SEMiX453GB17E4Ip 697 450 1.90 153 150 557 1.98 73 3Ip P8, HT SEMiX305TMLI17E4C 1) 486 300 1.90 38 60 338 2.00 38 5 P8, HT 1700V – IGBT3 (Trench) SEMiX653GAR176HDs 619 450 2.00 300 180 545 1.70 73 3s P8, HT SEMiX604GB176HDs 567 400 2.00 215 165 740 1.50 95 4s P8, HT SEMiX854GB176HDs 779 600 2.00 300 250 740 1.70 170 4s P8, HT SEMiX653GD176HDc 619 450 2.00 300 180 545 1.70 73 33c P8 Footnotes: 1) Sample status / 2) In production new IGBT Modules / SEMiX Packages SEMiX 1s SEMiX 2s SEMiX 3s SEMiX 3p Dimensions in mm 78 SEMIKRON IGBT Modules / SEMiX Packages 7.92416 4.665 SEMiX 3Ip SEMiX 4s 7.67991 4.555 4.18 4.03 SEMiX 13 SEMiX 33c Dimensions in mm 4.67 4.665 IGBT Modules / SEMiX Packages 6.69909 6.15119 SEMiX 5 SEMiX 6p 7.23123 4.54661 Dimensions in mm 80 IGBT Modules / SEMITRANS SKM195GB066D 265 200 1.46 14 8 200 1.40 5.6 2 HT SKM400GB066D 500 400 1.45 8 16 450 1.40 14 3 P8 SKM200GARL066T 280 200 1.45 2.24 7.89 270 1.45 4 5 ­ SKM400GARL066T 1) 504 400 1.45 4.48 15.78 421 1.54 8 5 ­ 650V – IGBT3 (Trench) SKM300GAL07E3 394 300 1.45 3 14 335 1.40 6.4 3 P8 SKM600GAL07E3 852 600 1.45 20 37 812 1.40 9.1 3 P8 SKM300GAR07E3 394 300 1.45 3 14 335 1.40 6.4 3 P8 SKM600GAR07E3 852 600 1.45 20 37 812 1.40 9.1 3 P8 SKM300GB07E3 394 300 1.45 4.7 13.6 335 1.40 6.4 3 P8 SKM600GB07E3 852 600 1.45 20 37 812 1.40 9.1 3 P8 1200V – NPT IGBT (Ultrafast) SKM800GA125D 3) 760 600 3.20 88 48 720 2.3 28 4 P8 SKM400GAL125D 3) 400 300 3.3 17 18 390 2.06 16 3 P8 SKM400GAR125D 3) 400 300 3.3 17 18 390 2.06 16 3 P8 SKM100GB125DN 3) 100 75 3.3 9 3.5 95 2.06 4 2N HT SKM300GB125D 3) 300 200 3.3 16 11 260 2.00 13 3 P8 SKM25GAH125D 3) 39 25 3.20 3.9 1.6 47 2.13 1.1 6 -SKM200GB125D 3) 200 150 3.3 14 8 200 2.06 8 3P8 SKM400GB125D 3) 400 300 3.3 17 18 390 2.06 16 3 P8 Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1200V – NPT IGBT (Ultrafast) SKM50GD125D 3) 73 50 3.20 8 3.2 77 2.00 2.16 ­ 1200V – IGBT3 (Trench) SKM200GAL126D 260 150 1.71 18 24 200 1.60 18 3 P8 SKM600GAL126D 660 400 1.70 39 64 490 1.60 41 3 P8 SKM200GB126D 260 150 1.71 18 24 200 1.60 18 3 P8 SKM400GB126D 470 300 1.69 29 48 352 1.60 27 3 P8 1200V – V-IGBT SKM400GA12V 612 400 1.74 39 42 440 2.20 26 4 P8 SKM150GAL12V 231 150 1.75 13.5 14.2 189 2.14 8.5 2 HT SKM400GAL12V 612 400 1.74 39 42 440 2.20 26 3 P8 SKM75GB12V 114 75 1.84 6.7 7.1 97 2.17 4.2 2 HT SKM150GB12V 231 150 1.75 13.5 14.2 189 2.14 8.5 2 HT SKM200GB12V 311 200 1.76 14 22 229 2.20 13 3 P8 SKM400GB12V 612 400 1.74 39 42 440 2.20 26 3 P8 1200V – IGBT4 (Trench) SKM400GA12E4 616 400 1.80 28 59 461 2.20 37 4 P8 SKM900GA12E4 1305 900 1.83 130 121 871 2.31 53 4 P8 Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 82 IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1200V – IGBT4 (Trench) SKM300GAL12E4 422 300 1.85 27 39 353 2.17 23 3 P8 SKM600GAL12E4H20 2) 860 600 1.80 30 77 623 2.28 39 3 P8 SKM300GAR12E4 422 300 1.85 27 39 353 2.17 23 3 P8 SKM600GAR12E4H20 2) 860 600 1.80 30 77 623 2.28 39 3 P8 SKM300GB12E4 422 300 1.85 27 39 353 2.17 23 3 P8 SKM450GB12E4 700 450 1.84 32 60 461 2.31 28 3 P8 SKM450GM12E43) 700 450 1.84 32 60 461 2.31 28 3 P8 SKM600GM12E4 2) 860 600 1.80 30 77 623 2.28 39 3 P8 SKM50GAL12T4 81 50 1.85 5.5 4.5 65 2.22 3.6 2 HT SKM150GAL12T4 232 150 1.81 19.2 15.8 189 2.14 13 2 HT SKM300GAL12T4 422 300 1.85 27 29 353 2.17 23 3 P8 SKM50GB12T4 81 50 1.85 5.5 4.5 65 2.22 3.8 2 HT SKM100GB12T4 160 100 1.80 15 10.2 121 2.20 5.9 2 HT SKM150GB12T4 232 150 1.81 19.2 15.8 189 2.14 13 2 HT Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1200V – IGBT4 Fast (Trench) SKM300GB12T4 422 300 1.85 27 29 353 2.17 23 3 P8 SKM450GB12T4 699 450 1.84 32 49 461 2.31 28 3 P8 SKM600GB12T42) 860 600 1.80 33 70 623 2.28 40 3 P8 SKM200GM12T4 313 200 1.80 21 20 229 2.20 13 3 P8 SKM400GM12T4 616 400 1.80 33 42 461 2.20 30.5 3 P8 1200V – IGBT4 High Speed (Trench) (new product series, target data) SKM400GAL12F4 2) 548 400 2.06 28 32 402 2.55 18.5 3 P8 SKM400GAR12F4 2) 548 400 2.06 28 32 402 2.55 18.5 3 P8 SKM100GB12F42) 153 100 2.05 6.6 8 111 2.55 6.3 2 HT SKM150GB12F4G2) 221 150 2.05 7.8 10.8 197 2.43 8.9 3 P8 SKM300GB12F4 2) 380 300 2.06 16.5 24 334 2.43 16 3 P8 1200V – IGBT4 High Power (Trench) Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 84 IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1200V – M7 SKM1400MLI12TM72) 1667 1400 1.55 268 177 1705 2.07 76 10 HT 1700V – IGBT3 (Trench) SKM100GB176D 125 75 1.98 44 28.5 100 1.6 21.4 2 HT SKM200GB176D 260 150 2.01 93 58 210 1.70 31 3 P8 1700V – IGBT4 (Trench) SKM75GB17E4 125 75 1.93 30 29 88 2.00 212HT SKM150GB17E4 248 150 1.90 67 59 169 1.98 32 2 HT SKM200GB17E4 321 200 1.90 69 79 213 2.00 45 3 P8 Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1700V – IGBT4 (Trench) SKM1000GB17E4S2I41) 1235 1000 1.99 –1438 1.79 159 20 ­ 1700V – IGBT4 High Power (Trench) 1700V – Renesas Gen 8 SKM1400GAL17R8 2) 2337 1400 1.63 645 482 1874 1.84 236 10 HT SKM1400GAR17R8 2) 2337 1400 1.63 632 496 1874 1.84 269 10 HT Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs 86 IGBT Modules / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF @ Tj = 25°C typ. Err Package Thermal Interface Material A A V mJ mJ A VmJ Topology 1700V – Renesas Gen 8 Footnotes: 1) Sample status / 2) In production new / 3) Not for new designs Packages 2.40154 5 SEMITRANS 2 SEMITRANS 2N Dimensions in mm 2.67568 5.74667 IGBT Modules / SEMITRANS Packages SEMITRANS 3 SEMITRANS 4 SEMITRANS 5 SEMITRANS 6 Dimensions in mm 88 IGBT Modules / SEMITRANS Packages SEMITRANS 20 Dimensions in mm SEMIKRON Err Package Thermal Interface Material 600V – IGBT3 (Trench) SKiM301MLI07E4 SKiM401MLI07E4 SKiM601MLI07E4 A 252 313 432 A 300 400 600 V 1.55 1.55 1.55 mJ 2.8 3.3 6.1 mJ 17 21 44 A 177 289 317 V 1.40 1.40 1.39 mJ -1.8 2.4 4 4 4 P12 + HPTP P12 + HPTP P12 + HPTP Topology 1200V – IGBT3 (Trench) SKiM200GD126D 3) SKiM300GD126D SKiM300GD126DL SKiM400GD126DM SKiM400GD126DLM SKiM450GD126D SKiM450GD126DL 3) SKiM600GD126DLM SKiM601GD126DM -265 265 330 330 390 390 480 480 200 300 300 300 300 450 450 450 450 1.65 1.70 1.65 1.70 1.65 1.70 1.65 1.65 1.70 15 28 28 25 29 42 42 42 42 25 47 47 36 46 70 70 70 70 152 260 260 300 300 345 345 450 450 2.39 1.92 1.92 1.92 1.92 1.92 1.92 1.92 1.92 —22 —– 4 4 4 4 4 5 5 5 5 P12 + HPTP P12 + HPTP P12 + HPTP P12 + HPTP P12 + HPTP HPTP HPTP HPTP HPTP 1200V – IGBT4 (Trench) SKiM301TMLI12E4B SKiM401TMLI12E4B SKiM601TMLI12E4B 312 389 530 300 400 600 1.80 1.80 1.80 6.6 8.8 11 19 26 45 249 311 495 2.20 2.20 2.14 1.8 2.4 4.4 4 4 4 P12 + HPTP P12 + HPTP P12 + HPTP SKiM201MLI12E4 SKiM301MLI12E4 205 312 200 300 1.80 1.80 15 22 23 34 187 282 2.20 2.65 15 22 4 4 P12 + HPTP P12 + HPTP SKiM455GD12T4D1 3) 400 450 1.80 34 40 295 2.33 28 5 HPTP SKiM304GD12T4D 312 300 1.80 – – 221 2.33 – 4 P12 + HPTP 1700V – IGBT3 (Trench) SKiM120GD176D SKiM220GD176DH4 110 220 125 250 2.00 2.00 72 145 46 100 105 220 1.6 1.7 22 65 4 4 P12 + HPTP P12 + HPTP SKiM270GD176D 260 300 2.00 170 120 215 1.7 – 5 HPTP Footnotes: 3) Not for new designs SEMIKRON 91 IGBT Modules / SKiM 4/5 Packages SKiM 4 SKiM 5 1700V – IGBT4 (Trench) Footnotes: 10) Also available with new HpTp, see Accessories/Thermal Interface Materials SKiM429GD17E44F10) 579 420 1.90 178 189 394 1.93 119 93 P12, HPTP IGBT Modules / SKiM 63/93 Packages SKiM 63 SKiM 93 Dimensions in mm 94 SEMIKRON 95 Full Silicon Carbide Modules Highest Power Output and Efficiency SEMIKRON offers full silicon carbide power modules in SEMITOP and SEMITRANS housings. Using SiC MOSFETs from leading suppliers, high switching frequencies, minimal losses and maximum efficiency are achieved. Silicon Carbide also offers excellent power densities. The increase in switching frequency means passive filter components are drastically reduced. Power losses are lowered at the same time, resulting in smaller heat sinks and reducing cooling needs in general. Both benefits result in a major decrease in overall system costs. The full silicon carbide power modules are available from 20A to 540A in 1200V, with and without anti-parallel freewheeling Schottky diode. Sixpacks, half-bridges and boost converters including a bypass diode are available. In addition to its SiC MOSFET module portfolio, SEMIKRON offers also single SiC Schottky diodes in SEMIPACK and SEMITOP housings to ensure low loss rectification as well. Full SiC SEMITOP 98 SEMITRANS 102 SEMIPACK 103 For detailed information please refer to data sheets. 96 Full SiC 1200V SEMITOP® Sixpack Chopper H-Bridge Half-Bridge Rectifier SEMITRANS® 1200V – 1700V Half-Bridge SK200MB120CR03TE2 1) 1200 223 6.4 E2 HPTP, HT SK250MB120CR03TE2V12) 1200 266 5.3 E2 HPTP, HT SK35MLLE120SCp 1) 1200 36 40 2p P12, HPTP SK45MAHT12SCp 2) 1200 39 45 3p P12, HPTP Footnotes: 1) Sample status / 2) In production new 98 SiC Modules / Full SiC / SEMITOP Type VDS ID @ TC = 25°C RDS(on) @ Tj = 25°C typ. Package Thermal Interface Material V A mO Topology 1200V – SiC MOSFET SEMITOP rectifier module Footnotes: 1) Sample status / 2) In production new SiC Modules / Full SiC / SEMITOP Packages SEMITOP 2 Press-Fit SEMITOP 3 Press-Fit Dimensions in mm SiC Modules / Full SiC / SEMITOP Packages SEMITOP E1 SEMITOP E2 Dimensions in mm SEMIKRON 101 SiC Modules / Full SiC / SEMITRANS Type VDS ID @ TC = 25°C RDS(on) @ Tj = 25°C typ. Package Thermal Interface Material V A mO Topology 1200V – SiC MOSFET SKM500MB120SC 2) 1200 485 3.8 3 P8 1700V – SiC MOSFET 1200V – SiC Rectifier Footnotes: 2) In production new Packages SEMITRANS 3 Dimensions in mm 102 SEMIKRON SiC Modules / Full SiC / SEMIPACK Type VRRM VDRM IFAV @ TC TC VF0 @ Tj = 150°C max. rF @ Tj = 150°C max. Tj Package Thermal Interface Material Footnotes: 1) Sample status / 2) In production new Packages SEMIPACK 2 Dimensions in mm Hybrid Silicon Carbide Modules For Maximum Energy Efficiency SEMIKRON offers hybrid silicon carbide power modules in MiniSKiiP, SEMITOP, SEMITRANS, SEMiX and SKiM63/93. The latest IGBT technology is combined with SiC Schottky diodes from leading suppliers to increase the switching frequency and reduce power losses at the same time. Thanks to the minimal changes required in the system design, hybrid SiC power modules are an easy way to benefit from the features of Silicon Carbide. The hybrid silicon carbide power modules are available from 50A to 600A in 1200V in sixpack, half-bridge and chopper topologies. SiC Schottky freewheeling diodes have virtually no switching losses and reduce the turn-on losses of the IGBT drastically. In combination with standard or high-speed IGBTs, higher switching frequencies can be achieved in the same module package. This efficiently lowers the filter needs on the output side, for example, of solar inverters, UPS systems or high frequency power supplies. Higher output powers than with standard silicon power modules can also be achieved, interesting for motor drives. Hybrid SiC MiniSKiiP106 SEMITOP 107 SEMiX 3 Press-Fit 109 SEMITRANS 110 SKiM 63/93 111 For detailed information please refer to data sheets. Hybrid SiC MiniSkiiP® 1200V Half-Bridge Sixpack 3-level 0 40 60 80 100 200 300 400 500 600 I in A SEMITOP® 1200V Chopper 3-level I in A 0 40 60 80 100 200 300 400 500 600 SEMiX® Press-Fit 1200V Half-Bridge I in A 0 40 60 80 100 200 300 400 500 600 SEMITRANS® 1200V Half-Bridge 0 40 60 80 100 200 300 400 500 600 I in A SKiM®63/93 1200V Sixpack I in A 0 40 60 80 100 200 300 400 500 600 SiC Modules / Hybrid SiC / MiniSKiiP Type IGBT Diode Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF Package Thermal Interface Material A A V mJ mJ A V Topology 1200V – IGBT4 (Fast Trench) SKiiP38GB12F4V19 1) 303 300 2.05 10 22 133 1.40 II 3 P12, HPTP SKiiP25AC12F4V191) 61 50 2.05 0.6 3.1 45 1.40 II 2 P12, HPTP SKiiP38AC12F4V191) 102 100 2.05 6.4 6.3 64 1.40 II 3 P12, HPTP SKiiP39AC12F4V191) 144 150 2.05 9.6 9.4 118 1.40 II 3 P12, HPTP Footnotes: 1) Sample status Packages MiniSKiiPII 2 MiniSKiiPII 3 Dimensions in mm SiC Modules / Hybrid SiC / SEMITOP Type IGBT Diode Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VFPackage Thermal Interface Material A A V mJ mJ A V Topology 1200V – IGBT4 Fast (Trench) Footnotes: 1) Sample status SK50GLLE12F4SCTE11) 58 50 2.05 0.55 3.11 59 0.97 E1 HPTP, HT SK150MLIT12F4TSCE2 1) 149 150 2.05 8.9 11 81 2.20 E2 HPTP, HT SK150MLIB12F4TSCE2 1) 149 150 2.05 8.9 11 81 2.20 E2 HPTP, HT SiC Modules / Hybrid SiC / SEMITOP Packages SEMITOP E1 SEMITOP E2 Dimensions in mm SiC Modules / Hybrid SiC / SEMiX Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF Package Thermal Interface Material A A V mJ mJ A V Topology 1200V – IGBT4 (Trench) SEMiX603GB12E4SiCp 1110 600 1.80 17 72 404 1.40 3p P8, HT Packages SEMiX 3p Dimensions in mm SEMIKRON 109 SiC Modules / Hybrid SiC / SEMITRANS Type IGBT Diode Module IC @ TC= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TC = 25°C VF Package Thermal Interface Material A A V mJ mJ A V Topology 1200V – IGBT4 (Trench) 1200V – IGBT4 (Fast Trench) SKM200GB12F4SiC32) 312 200 2.06 3.5 14 123 1.40 3 P8 Footnotes: 2) In production new Packages SEMITRANS 3 Dimensions in mm SiC Modules / Hybrid SiC / SKiM 63/93 Type IGBT Diode Module IC @ TS= 25°C ICnom VCE(sat) @ Tj = 25°C typ. Eon Eoff IF@ TS = 25°C VF Package Thermal Interface Material A A V mJ mJ A V Topology 1200V – IGBT4 (Fast Trench) SKiM459GD12F4V4 2) 475 450 2.05 5 20 357 1.33 93 P12, HPTP Footnotes: 2) In production new Packages SKiM 93 Dimensions in mm MOSFET Modules Best in Class Switching Performance SEMIKRON offers MOSFET modules in single switch, half-bridge, H-bridge and Sixpack configuration in the SEMITOP package. The available MOSFET modules in the voltage class of 100V and current ratings of 80A and 335A are specifically designed for high-speed switching applications, boasting low switching losses. SEMITOP 114 For detailed information please refer to data sheets. SEMITOP ® 100V Sixpack H-Bridge Half-Bridge SEMIKRON 113 MOSFET Modules / SEMITOP Type VDS ID @ TC = 25°C RDS(on) @ Tj = 25°C typ. Package Thermal Interface Material V A mO Topology 100V sk85 MH 10 T 3) 100 80 – 2 P12, HPTP SK280MB10 2) 100 335 1.15 3 P12, HPTP Footnotes: 2) In production new / 3) Not for new designs Packages SEMITOP 2 SEMITOP 3 Dimensions in mm SEMIKRON 115 Thyristor / Diode Modules With Proven Packages The SEMIKRON thyristor/diode modules are available in different packages such as SEMIPACK, SEMiSTART, SEMIPONT, SEMiX and SEMITOP. Various packaging technologies – soldering, wire bonding and pressure contact – are available. The thyristor/diode modules are offered in a variety of dual and single topologies. With blocking voltages of up to 2200V, SEMIKRON offers a solution for most phase control or rectifier applications. Thanks to the comprehensive product range, the optimum solution can be found for every application. SEMITOP 118 SEMiX 120 SEMIPONT 122 SEMIPACK 123 SEMIPACK Fast SEMiSTART 129 For detailed information please refer to data sheets. 800V up to 1600V SEMITOP® Rectifier Thyristor I in A 0 100 500 1000 1500 2000 2500 3000 TAV / FAV 1600V up to 2200V SEMiX® Rectifier Thyristor I in A 0 100 500 1000 1500 2000 2500 3000 TAV / FAV SEMIPONT® 1200V up to 1600V Rectifier Thyristor I in A 0 100 500 1000 1500 2000 2500 3000 TAV / FAV SEMIPACK® 400V up to 2200V Rectifier Thyristor in A 0 100 500 1000 1500 2000 2500 3000 ITAV / FAV SEMiSTART® 1400V up to 1800V Thyristor in A 0 100 500 1000 1500 2000 2500 3000 Ioverload Thyristor / Diode Modules / SEMITOP Type VRRM VDRM ITAV IFAV @ TS TS ITSM IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology sk55 TAA 800-1600 55 80 900 0.85 5.70 -40 … +130 2 P12, HPTP sk100 TAA 800-1600 100 80 2000 0.90 3.50 -40 … +130 2 P12, HPTP sk100 TAE 12 1200 100 80 1800 0.85 2.20 -40 … +130 2 P12, HPTP sk45 KQ 800-1600 47 85 380 1.00 10.00 -40 … +125 1 ­ sk100 KQ 800-1600 101 85 1350 0.90 4.50 -40 … +125 2 P12, HPTP sk25 WT 800-1600 29 85 280 1.10 20.00 -40 … +125 2 P12, HPTP sk100 WT 800-1600 101 85 1350 0.90 4.50 -40 … +125 3 P12, HPTP sk25 UT 800-1600 29 85 280 1.10 20.00 -40 … +125 3 P12, HPTP sk45 UT 800-1600 47 85 380 1.00 10.00 -40 … +125 3 P12, HPTP Thyristor / Diode Modules / SEMITOP Packages 5.74875 SEMITOP 1 5.2325 7.97408 SEMITOP 2 8.08732 SEMITOP 3 6.59769 Dimensions in mm 8.03716 SEMITOP 2 Press-Fit 6.76054 8.07255 SEMITOP 3 Press-Fit 6.58582 SEMIKRON 119 Thyristor / Diode Modules / SEMiX Type VRRM VDRM ITAV IFAV @ TC TC ITSM IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material SEMiX302KD16s 1600 300 85 7500 0.85 1.1 -40 … +130 2s P8, HT SEMiX603KD16p 1600 732 85 9000 0.916 1.9 -40 … +175 3Ip P8, HT Packages SEMiX 1s SEMiX 2s Dimensions in mm Thyristor / Diode Modules / SEMiX Packages SEMiX 3Ip Dimensions in mm SEMIKRON 121 Thyristor / Diode Modules / SEMIPONT Type VRRM VDRM ITAV IFAV @ TS TS ITSM IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology SKUT85/16 V2 2) 1600 85 85 1050 1.1 6.0 -40 … +125 5 ­ SKUT115/16 V2 2) 1600 105 85 1250 0.9 5.0 -40 … +125 5 ­ Footnotes: 2) In production new Packages SEMIPONT 5 Dimensions in mm Thyristor / Diode Modules / SEMIPACK Type VRRM VDRM ITAV IFAV @ TC TC ITSM IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material SKKD46 800-1800 47 85 600 0.85 5 -40 … +125 1 ­ SKKD81 H4 2000-2200 82 85 1750 0.85 1.8 -40 … +125 1 ­ SKKD101/16 1600 134 85 2000 0.87 2.45 -40 … +130 1 ­ SKKD250/16 1600 255 85 6000 0.77 1.00 -40 … +135 2 HT SKKD260 800-2200 260 85 10000 0.9 0.37 -40 … +130 3 ­ SKKD380 800-2200 380 100 10000 0.80 0.35 -40 … +150 3 ­ SKKH27 800-1800 25 85 480 0.90 12 -40 … +125 1 ­ SKKH57 800-1800 50 85 1250 0.90 3.5 -40 … +125 1 ­ SKKH58/16 E 1600 55 85 1200 1.00 4.8 -40 … +130 1 ­ SKKH72 H4 2000-2200 70 85 1450 0.90 3.5 -40 … +125 1 ­ SKKH106 800-1800 106 85 1900 0.90 2 -40 … +130 1 ­ SKKH122 800-1800 129 85 3200 0.85 2 -40 … +125 2 HT SKKH172/18 E 1800 175 85 5000 0.83 1.3 -40 … +125 2 HT SKKH215/18 E 1800 215 85 5700 0.85 1.2 -40 … +125 2 HT Thyristor / Diode Modules / SEMIPACK Type VRRM VDRM ITAV IFAV @ TC TC ITSM IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material SKKH273 1200-1800 273 85 8000 0.90 0.92 -40 … +130 3 ­ SKKT215/16 E 1600 215 85 5700 0.85 1.2 -40 … +125 2 HT SKKT250 800-1800 250 85 8000 0.93 0.45 -40 … +130 3 ­ SKKT280 H4 2000-2200 252 85 7500 0.90 0.75 -40 … +125 3 ­ SKKT330 800-1800 305 85 8000 0.80 0.6 -40 … +130 3 ­ SKKT460/22 E H4 2200 460 85 15500 0.88 0.45 -40 … +130 5 ­ Thyristor / Diode Modules / SEMIPACK Packages 5.54518 2.45 SEMIPACK 1 SEMIPACK 2 4.96463 2.3425 8.24512 8.23874 SEMIPACK 3 SEMIPACK 4 9.14776 11.5628 Dimensions in mm Thyristor / Diode Modules / SEMIPACK Packages 7.79915 8.23859 SEMIPACK 5 SEMIPACK 6 10.6085 5.41357 Dimensions in mm Thyristor / Diode Modules / SEMIPACK FAST Type VRRM VDRM ITAV IFAV @ TC TC IFSM @ Tjmax VT(TO) @ Tjmax rT @ Tjmax Tj Package Thermal Interface Material SKKE290F06 600 290 109 6000 0.9 1.2 -40 … +150 2 HT SKKE600F125) 1200 600 85 5800 1.2 1.9 -40 … +150 4 ­ SKKD42F 1200-1400 42 85 1100 1 5 -40 … +130 1 ­ Footnotes: 5) SEMIPACK Fast in SEMITRANS 4 case Packages 5.54518 2.45 SEMIPACK 1 SEMIPACK 2 Dimensions in mm 4.96463 2.3425 Thyristor / Diode Modules / SEMIPACK FAST Packages SEMIPACK Fast in SEMITRANS 4 Dimensions in mm Thyristor Modules / SEMiSTART Type VRRM VDRM Ioverload W1C (for 20s) TC ITSM @ Tj = 125°C VT(TO) @ Tjmax =125°C rT @ Tjmax =125°C Tjmax (for 20s) Package Thermal Interface Material V A °C A V mO °C Topology SKKQ 800 1400-1800 800 150 5200 0.9 0.8 150 2 ­ SKKQ 1500 1400-1800 1500 150 15000 0.85 0.3 150 2 ­ Packages SEMiSTART 1 Dimensions in mm Thyristor Modules / SEMiSTART Packages SEMiSTART 2 Dimensions in mm Thyristor Modules / SEMiSTART Packages SEMiSTART 3 Dimensions in mm SEMIKRON 131 Bridge Rectifier Modules For Reliable Inverter Designs Bridge rectifiers include the components of a rectifier circuit in a single, compact package. Bridge rectifiers are available from a few amps to several hundred amps nominal current in different package types. SEMIKRON offers un-, half- or full-controlled bridge rectifier modules in single phase or 3-phase topology with or without brake chopper. The bridge rectifier modules are available in different packages such as SEMiX, SEMITOP, SEMIPONT, Power Bridge and MiniSKiiP. MiniSKiiP134 SEMITOP 136 SEMIPONT 140 SEMiX 144 Power Bridge 147 For detailed information please refer to data sheets. MiniSKiiP® / SEMITOP®/SEMIPONT®/ SEMiX® Rectifier with 600V up to 1800V Brake Chopper in A 0 10 20 50 80 100 200 300 400 500 600 700 ID/C/F SEMITOP®/SEMIPONT®/SEMiX®/ Power Bridge Three Phase Rectifier 200V up to 2200V ID in A 0 10 20 50 80 100 200 300 400 500 600 700 SEMIPONT®/SEMITOP®/ Power Bridge Single Phase Rectifier 100V up to 2200V ID in A 0 10 20 50 80 100 200 300 400 500 600 700 Bridge Rectifier Modules / MiniSKiiP Type VRRM VDRM IF@TS TS IFSM/TSM@TS=25°C VT(TO) rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 3-phase Rectifier 3-phase Rectifier + Chopper SKiiP28ANB16V2 1600 83 70 1000 0.8 7 -40 … +150 II 2 P12, HPTP SKiiP28ANB18V3 2) 1800 98 70 1000 0.965 3.4 -40 … +150 II 2 P12, HPTP SKiiP39AHB16V1 1600 121 70 1250 0.85 4 -40 … +125 II 3 P12, HPTP Footnotes: 1) Sample status / 2) In production new 134 SEMIKRON Bridge Rectifier Modules / MiniSKiiP Type VRRM VDRM IF@TS TS IFSM/TSM@TS=25°C VT(TO) rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 3-phase Rectifier + Chopper SKiiP39ANB16V1 1600 124 70 1600 0.8 4 -40 … +150 II 3 P12, HPTP SKiiP39AHB16V3 2) 1600 128 70 1250 0.85 2.8 -40 … +130 II 3 P12, HPTP Footnotes: 1) Sample status / 2) In production new Packages MiniSKiiPII 2 MiniSKiiPII 3 Dimensions in mm SEMIKRON 135 Bridge Rectifier Modules / SEMITOP Type VRRM VDRM ID @ TS TS ITSM IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material 1 1 and 3 phase sk50 B sk55 B 06 F sk55 B 12 F sk70 B sk100 B V 800-1600 600 1200 800-1600 800-1600 A 51 54 57 68 100 °C 80 80 80 80 80 A 270 440 550 560 890 V 0.8 0.9 1.20 0.8 0.83 mO 13.00 16.00 22.00 11.00 3.90 °C -40 … +150 -40 … +150 -40 … +150 -40 … +150 -40 … +150 2 2 2 2 2 P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP Topology sk35 BZ 800-1600 35 80 270 0.85 14.00 -40 … +125 2 P12, HPTP sk40 BHL 066T 2) 1600 42 42 280 0.85 20.00 -40 … +130 3 P12, HPTP sk80 BTAGL 07F3 T 2) 650 150 – 120 – – -40 … +130 4 P12, HPTP sk55 D sk70 D sk80 D 12F sk95 D sk95 D 16p 2) 800-1600 800-1600 1200 800-1600 1600 55 70 80 95 95 80 80 80 80 80 200 270 550 560 560 0.8 0.8 1.2 0.8 0.8 13.00 13.00 22.00 11.00 11.00 -40 … +150 -40 … +150 -40 … +150 -40 … +150 -40 … +150 2 2 3 2 2p P12, HPTP P12, HPTP P12, HPTP P12, HPTP P12, HPTP sk40 DT sk70 DT 800-1600 800-1600 42 68 80 80 280 380 1.1 1 20.00 10.00 -40 … +125 -40 … +125 3 3 P12, HPTP P12, HPTP sk30 DTA sk60 DTA sk80 DTA 800-1600 800-1600 800-1600 25 61 65 80 80 80 900 1350 1800 1.00 0.90 0.90 6.00 0.60 3.50 -40 … +150 -40 … +125 -40 … +150 3 3 3 P12, HPTP P12, HPTP P12, HPTP Footnotes: 1) Sample status / 2) In production new Bridge Rectifier Modules / SEMITOP Type VRRM VDRM ID @ TS TS ITSM IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 1 and 3 phase sk40 DH 800-1600 42 80 270 1.1 20.00 -40 … +150 3 P12, HPTP sk70 DH 800-1600 68 80 270 1 10.00 -40 … +125 3 P12, HPTP sk55 DGL 126 1200 55 80 370 0.80 13.00 -40 … +150 3 P12, HPTP sk95 DGL 126 1600 96 80 700 0.8 11.00 -40 … +150 3 P12, HPTP sk170 DHL 126 1) 1200 170 70 1000 0.8 7.00 -40 … +150 4 P12, HPTP sk200 DHL 066 1) 600 210 70 1250 0.8 4.00 -40 … +150 4 P12, HPTP sk150 DGL 12T4 1) 1200 138 –0.83 –40 … +150 3 P12, HPTP SK70B07TD1E1 1) 650 68 68 560 0.8 11.00 -40 … +175 E1 HPTP, HT sk95 GAB 06 UF 600 126 –0.8 11 -40 … +150 3 P12, HPTP SK225BV07S5TD1E2 1) 800 370 -1250 0.85 3.09 -40 … +130 E2 HPTP, HT Footnotes: 1) Sample status / 2) In production new Bridge Rectifier Modules / SEMITOP Packages 7.97408 8.03716 SEMITOP 2 SEMITOP 2 Press-Fit 6.705 6.76054 8.08732 8.07333 SEMITOP 3 SEMITOP 4 6.59769 7.58046 Dimensions in mm Bridge Rectifier Modules / SEMITOP Packages SEMITOP E1 SEMITOP E2 Dimensions in mm SEMIKRON 139 Bridge Rectifier Modules / SEMIPONT Type VRRM VDRM ID @ TC TC ITSM IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 1 and 3 phase SKB52 400-1800 50 99 425 0.85 8.0 -40 … +150 3 – SKB72 400-1800 70 101 640 0.85 5.0 -40 … +150 3 – SKBZ28 400-1400 28 89 280 1 16.0 -40 … +125 1 ­ Footnotes: 2) In production new / 3) Not for new designs Bridge Rectifier Modules / SEMIPONT Type VRRM VDRM ID @ TC TC ITSM IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 1 and 3 phase SKD60 400-1600 60 102 850 0.85 5.0 -40 … +125 2 ­ SKD82 400-1800 80 110 640 0.85 5.0 -40 … +150 3 ­ SKD110 800-1800 110 100 1000 0.85 4.0 -40 … +150 4 ­ SKD145 1200-1800 145 85 1700 0.8 4.0 -40 … +150 5 ­ 3 phase with brake chopper SKD116/..-L140 2) 1200-1600 110 85 1050 0.8 7.0 -40 … +125 6 -SKD146/..-L140T4 2) 1200-1600 140 85 1250 0.8 4.0 -40 … +125 6 -SKDH 116/..L140 2) 1200-1600 110 85 1000 0.8 7.0 -40 … +125 6 -SKDH 146/..-L140 2) 1200-1600 140 85 1250 0.8 4.0 -40 … +125 6 -Footnotes: 2) In production new / 3) Not for new designs SKD116/..-L105 2) 1200-1600 110 85 1050 0.8 7.0 -40 … +125 6 -SKD146/..-L105 2) 1200-1600 140 85 1250 0.8 4.0 -40 … +125 6 -SKDH 116/..L105 2) 1200-1600 110 85 1000 0.8 7.0 -40 … +125 6 -SKDH 146/..-L105 2) 1200-1600 140 85 1250 0.8 4.0 -40 … +125 6 -Bridge Rectifier Modules / SEMIPONT Packages SEMIPONT 1 SEMIPONT 2 SEMIPONT 3 SEMIPONT 4 Dimensions in mm 142 SEMIKRON Bridge Rectifier Modules / SEMIPONT Packages SEMIPONT 5 SEMIPONT 6 Dimensions in mm SEMIKRON 143 Bridge Rectifier Modules / SEMiX Type VRRM VDRM ID @ TC TC ITSM IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 3 phase SEMiX586D16p1) 1600 700 85 4200 0.916 1.4 -40 … +175 6p HT SEMiX526D22p1) 2200 650 85 5300 0.834 1.4 -40 … +150 6p HT Footnotes: 1) Sample status / 2) In production new Bridge Rectifier Modules / SEMiX Packages SEMiX 13 SEMiX 5 Dimensions in mm SEMIKRON 145 Bridge Rectifier Modules / SEMiX Packages SEMiX 6p Dimensions in mm Bridge Rectifier Modules / Power Bridge Type VRRM VDRM ID @ TC TC IFSM@Tjmax VT(TO)@Tjmax rT@Tjmax Tj Package Thermal Interface Material V A °C A V mO °C Topology 1 phase BI 25 400-1800 25 26 310 0.85 9.00 -40 … +150 BI – SKB26 200-2000 18 75 320 0.85 12.00 -40 … +150 G 50a – SKB35 400-1600 35 29 330 0.85 7.00 -40 … +150 G 10b – 3 phase SKD26 400-1600 20 73 320 0.85 12.00 -40 … +150 G 50b ­ SKD33 400-1800 33 110 240 0.8 18.00 -40 … +150 G55 ­ SKD35 AV 1200-1600 39 70 345 0.9 6.00 -40 … +150 G 11b ­ SKD53 400-1800 53 100 270 0.8 13.00 -40 … +150 G55 ­ DBI 6 400-1800 9 90 150 0.85 30.00 -40 … +150 DBI ­ Packages G 10b, G 11b Dimensions in mm Bridge Rectifier Modules / Power Bridge Packages G 50a, G 50b G 12, G 13 Dimensions in mm Bridge Rectifier Modules / Power Bridge Packages G 51 G 55 Dimensions in mm SEMIKRON 149 Bridge Rectifier Modules / Power Bridge Packages BI DBI DBI P Dimensions in mm 150 SEMIKRON SEMIKRON 151 Intelligent Power Modules IPMs PAGE SKiiP154 2 Intelligent Power Module (IPM) for Increased Reliability, Integration and Power Density SKiiP® Portfolio SKiiP3, 4 500A up to 3600A Short facts 4-in-1: Driver, Power semiconductors, Accurate current sensor and High Performance Cooling (HPC) 2-3 times higher power cycling capability thanks to sinter technology (SKiiP4) 25% higher performance than conventional water coolers Fully assembled and 100% burn-in tested Single side and double side mounting on HPC water cooler Additional option: Higher Diode chip area for Wind Converter Generator side power converter Key features Integrated driver, semiconductor and High Performance Cooling (HPC) Integrated temperature measurement Integrated high accuracy current sensors Integrated DC-Link monitoring CAN-bus for configuration and read-out in SKiiP4 100% solder-free sintered SKiiP4 Applications SKiiPfully meets the specific requirements for wind turbines in the 0.5 to 6MW power range. In addition to wind power appli­cations, SKiiPmodules are also in elevators, solar inverters and railway applications – in fact, in any area where powerful, safe and reliable IGBT IPMs are a must. Benefits Reach unprecedented power density with the most powerful Intelligent Power Module on the market. SKiiPincreases relia­bility for demanding power cycling conditions thanks to silver sintering and High Performance Cooler Technology. Extend operation lifetime with Sinter Technology, increasing resilience to active and passive thermal cycling compared to a conventional solder approach. SKiiP4 digital drivers reduce design comple­xity and costly components, while guaranteeing safe isolation for both switching signals and parameter measurement. In addition to a high reliability design, SKiiP4 drivers also include CAN-bus functionality. Product range SKiiPIPMs are available in half-bridge and sixpack topologies with power ratings up to 4MW without paralleling. In addition to water and air cooling, customised cooling is also available in SKiiP3 and SKiiP4. Accessories for interfacing SKiiP3 and SKiiP4 to control boards are also available, including fiber-optic, paralleling and adapter boards. IPM SEMIKRON For Highly Integrated IPMs SKiiPs (SEMIKRON integrated intelligent power modules) combine IGBT module, gate drive and cooling technology in one setup, perfectly matched. Final testing at the end of production, including a one-hour burn-in test, ensures the highest reliability in the application. The SKiiPIPM product line sets a benchmark for high performance and robust inverter designs. Both SKiiP3 and SKiiP4 feature high power densities combined with flexible cooling options, such as air and water cooling or customized heat sinks. Reliable driver technology, integrated current sensors and comprehensive protection functions complete the IPM design. SKiiP3 has propagated widely through the industrial drive segment. With its sixpack and half-bridge topologies, it covers a current range from 500A up to 2400A. The SKiiP4, available in half-bridge topology, has been optimized for highest power cycling requirements and covers the higher power range up to 3600A. SKiiP3/4 158 SKiiPAccessories 167 For detailed information please refer to data sheets. Further information: www.semikron.com/ipm 1200V up to 1700V SKiiP®3 Sixpack Half-Bridge in A 0 50 100 600 1200 1800 2400 3600 ICnom SKiiP® 4 1200V up to 1700V Half-Bridge in A ICnom 0 50 100 600 1200 1800 2400 3600 IPM / SKiiP Type IGBT Diode Module IC @ TS= 25°C Inom VCE(sat) @ Tj = 25°C typ. Eon + Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err OptionsF=F-OptionU=U-OptionS=SKiFace Adapter Package A A V mJ A V mJ Topology 1200V – IGBT 3 (Trench) – SKiiP3 1200V – IGBT 4 (Trench) – SKiiP4 SKiiP2414 GB12E4-4DUSL 3100 2400 2.01 1680 2369 2.33 200 F,S S44 SKiiP2414 GB12E4-4DULR 3100 2400 2.01 1680 2369 2.33 200 F,S S44 1700V – IGBT 3 (Trench) – SKiiP3 Footnotes: 1) Sample status 158 SEMIKRON IPM / SKiiP Type IGBT Diode Module IC @ TS= 25°C Inom VCE(sat) @ Tj = 25°C typ. Eon + Eoff IF@ TS = 25°C VF @ Tj = 25°C typ. Err OptionsF=F-OptionU=U-OptionS=SKiFace Adapter Package A A V mJ A V mJ Topology 1700V – IGBT 3 (Trench) – SKiiP3 SKiiP2013 GB172-4DFL V3 2102 2000 1.9 1150 1758 2.00 171 F,U S43 SKiiP2403 GB172-4DW V3 2282 2400 1.9 1150 1921 2.00 171 F,U S43 1700V – IGBT 4 (Trench) – SKiiP4 SKiiP3614 GB17E4-6DUW V2 5078 3600 2.12 6840 3547 2.02 996 F,S S64 SKiiP3614 GB17E4-6DPVLR V2 5078 3600 2.12 6840 3547 2.02 996 F,S S64 SKiiP2414 GB17E4-4DUHP 1) 3504 2400 2.12 2840 2721 2.02 664 F,S S44 SKiiP1814 GB17E4-3DUHP 1) 2624 1800 2.12 2130 2041 2.02 498 F,S S34 Footnotes: 1) Sample status IPM / SKiiP SKiiP3 Package S 23 mounted on P3016 heat sink Weight without heat sink: 1,7 kg P3016: 4,4 kg Package S 23 mounted on liquid cooled heat sink NWK 40 NWK 40: 2,8 kg Dimensions in mm IPM / SKiiP SKiiP3 Package S 33 mounted on P3016 heat sink Weight without heat sink: 2,4 kg P3016: 6,2 kg Package S 33 mounted on liquid cooled heat sink NWK 40 NWK 40: 5,2 kg Dimensions in mm SEMIKRON 161 IPM / SKiiP SKiiP3 Package S 43 mounted on P3016 heat sink Weight without heat sink: 3,1 kg P3016: 8,0 kg Package S 43 mounted on liquid cooled heat sink NWK 40 NWK 40: 6,2 kg Dimensions in mm IPM / SKiiP SKiiP4 Package S 34 mounted on P4016 heat sink Weight without heat sink: 2,48 kg P4016: 5,9 kg Package S 34 mounted on liquid cooled heat sink NHC NHC: 3,49 kg Dimensions in mm SEMIKRON 163 IPM / SKiiP SKiiP4 Package S 44 mounted on P4016 heat sink Weight without heat sink: 3,22 kg P4016: 7,55 kg Package S 44 mounted on liquid cooled heat sink NHC NHC: 4,25 kg Dimensions in mm IPM / SKiiP SKiiP4 Package S 64 mounted on P4016 heat sink Weight without heat sink: 4,84 kg P4016: 9,9 kg Package S 64 mounted on liquid cooled heat sink NHC NHC: 5,77 kg Dimensions in mm SEMIKRON 165 IPM / SKiiP SKiiP4 Package S 44 mounted on P4016 heat sink with 90° rotated fins Weight without heat sink: 3,22 kg P4016: 8,5 kg Package S 64 mounted on P4016 heat sink with 90° rotated fins Weight without heat sink: 4,84 kg P4016: 9,9 kg Dimensions in mm IPM / SKiiPAccessories Type F-Option SKiiP3 F-Option SKiiP4 SKiiP4 F-Option with D-Sub connector Fiber optic control board for SKiiP4 SKiiP3 Parallel Board SKiiP4 Parallel Board SKiiP4 Parallel Board 2-fold F-Option Board for paralleling of 2 SKiiP4, F-Option usage possible SKiFace Adapter Board SKiiP4 SKiFace Adapter Temp Adapter board to connect SKiiP4 to SKiiP3 controller with temperatur measurement function IGBT Drivers PAGE SKYPER168 3 Versatile and Robust for Flexible Solutions SKYPER® Short facts Suitable for multilevel, Generation 7 IGBT and 1500VDC application Safe gate control due to robust magnetic signal transmission Creepage and clearance distances provide safely operating isolation with up to 14.1mm, 12kV impulse withstand voltage capability Highly integrated SEMIKRON ASIC technology with few external components achieve outstanding MTBF Exceptional EMC robustness beyond IEC standards Key features Two IGBT driver channels For IGBT modules up to 1700V Up to 4.2W & 35Apk output per channel Suitable for 1500VDC operating voltage 100% isolation test of signal and power transformers High safety isolation capability Selectable multilevel error logic Selectable minimum dead time Selectable filter time and failure management Customized Plug-and-Play drivers available Wide adapter board portfolio available on request Applications High power wind, solar, and energy storage applications require a powerful driver core to meet multilevel functionality and modules equipped with IGBT Generation 7. The SKYPERdriver family offers a solution for the entire industrial market segment from several kilowatts to the megawatt range. Within the SKYPERIGBT driver family, the new PV solar driver cores set standards for compact driver designs suitable for 1500VDC operating voltage at up to 100kHz switching fre­quency. Reach higher solar inverter power density with the SKYPER12 PV R, which delivers 20A output peak current and 1.25W output power per channel. Master high power and add multilevel safe turn-off strategies with the new SKYPER42 LJ PV, which provides 35A output peak current and 4.2W output power per channel. Generic adaptor boards using the proven SKYPERdriver cores provide easy-to-use R&D platforms for innovative SiC technology based applications. In conjunction with available adaptor boards, SKYPERdrivers also adapt to SiC MOSFET technology. Benefits Developed to meet highest industrial safety and robustness requirements the SKYPERproduct portfolio has a solution for nearly all application needs. The SKYPERplatform offers a driver solution with UL recognition, versatility, and extended clearance/creepage distances. An optimized interface and adjustable filter setting allow the SKYPERfamily to reach robustness against external interference beyond the stipulated IEC standards. For safe IGBT gate control, all SKYPERdrivers employ highly integrated ASIC technology, which guarantees minimum tolerances over the entire operational temperature range. Master short circuit conditions in standard and mul­tilevel applications with this tailor-made error management and separated error channels. Prevent dangerous transient overvoltage conditions during turn-off with SoftOff switching technology and voltage feedback. Adaptor boards and appli­cation samples are available for most standard power module packages, allowing fast, easy testing and commissioning. Product range The SKYPERdrivers are available as driver cores and Plug-and-Play drivers for Half-bridge and multilevel applications. The SKYPERplatform drive up to 1700V IGBT modules and operates under harsh application conditions, including 1500V DC-link and ambient temperatures to 105°C. Adaptor boards and application samples are available for most standard power module packages, allowing fast, easy testing and commissioning. IGBT Driver SEMIKRON IGBT Driver Family SEMIKRON’s IGBT drivers offer the ability to master the challenging conditions of today’s power electronics. The SKYPER42 LJ PV sets a new benchmark for high switching, high voltage applications. The latest member of the SKYPERfamily operates with up to 100kHz switching frequency at 1500V DC-link and ambient temperatures up to 105°C. For more than 14 years, the SKYPER32 R has reliably operated under challenging environmental conditions to become an industrial standard. SEMIKRON ensures continuity of the SKYPER32 R by introducing its successor: SKYPER32 2nd edition. For detailed information please refer to data sheets. SKYPER& SKHI Up to 1700V SKYPER® & SKHI Driver Cores Pout in W/per channel 0 1 2 3 4 8 16 32 600V up to 1700V SKYPER® Plug-and-Play Drivers Pout in W/per channel 0 1 2 3 4 8 16 32 Up to 1700V SKYPER® & SKHI Pout in W/per channel 0 1 2 3 4 8 16 32 IGBT Driver Type Channels VCE VG(on) VG(off) Iout(PEAK) Qout fmax Visol dv/dt V V V AµCkHzkVkV/µs Driver SKHI 10/17 R 1 1700 15 -8 8 9.6 100 4000 75 SKHI 23/17 R 2 1700 15 -8 8 4.8 100 4000 75 SKYPER12 press-fit 300A 2 1200 15 -11.3 15 8 20 4000 50 SKYPER12 press-fit 600A 2 1200 15 -11.3 15 8 10 4000 50 SKYPER12 press-fit C 450A 2 1200 15 -11.3 15 8 13 4000 50 SKYPER12 press-fit 450A 1700V 2 1700 15 -11.3 15 8 9 4000 50 SKYPER12 press-fit C 450A 1700V 2 1700 15 -11.3 15 8 9 4000 50 SKYPERPRIME 1700V 1kA PP 2 1700 15 -8 15 10 10 5000 50 SKYPERPRIME 1700V 1400A ST10 2 1700 15 -8 15 10 10 5000 50 SKYPERPRIME 1200V 1400A ST10 2 1200 15 -8 15 7.5 10 5000 50 SKYPERPRIME O 1700V 1400A PP 2 1700 15 -8 15 13.5 7.4 5000 50 SKYPERPRIME O 1200V 1400A PP 2 1200 15 -8 15 10 10 5000 50 Driver Core SKHI 22 A/B H4 R 2 1700 15 -7 8 4 504000 50 SKYPER12 R 2 1700 15 -9 20 20 100 5000 50 SKYPER32 R 3) 2 1700 15 -7 15 2.5 50 4000 50 SKYPER32 2nd edition 2) 2 1700 15 -7 20 9 50 4000 50 SKYPER32 PRO R 2 1700 15 -7 15 6.3 50 4000 50 SKYPER42 R/02 (coated) 2 1700 15 -8 30 50 100 4000 100 SKYPER42 LJ R (coated) 2 1700 14.8 -8 24 20 100 4000 100 SKYPER32 2nd edition 2) 2 1700 15 -7 20 9 50 4000 50 Adapter Board Board 1 SKYPER32PRO R 2 1700 15 -7 15 6.3 50 4000 50 Board 2 generic SKYPER42 R 2 1700 15 -8 30 50 100 4000 100 Board 2S SKYPER32 PRO R Gold 2 1700 15 -7 15 6.3 50 4000 50 Board 3S SKYPER32 PRO R Gold 2 1700 15 -7 15 6.3 50 4000 50 Board 4S SKYPER32 PRO R Gold 2 1700 15 -7 15 6.3 50 4000 50 Footnotes: 2) In production new / 3) Not for new designs / 7) Thyristor Driver / 8) MOSFET Driver IGBT Driver Type Channels VCE VG(on) VG(off) Iout(PEAK) Qout fmax Visol dv/dt V V V AµCkHzkVkV/µs Footnotes: 2) In production new / 3) Not for new designs / 7) Thyristor Driver / 8) MOSFET Driver Board 63 GB SKYPER42 R 2 1700 15 -8 30 50 100 4000 100 Board 93 GB SKYPER42 R 2 1700 15 -8 30 50 100 4000 100 Stacks PAGE Water-Cooled IGBT 178 Air-Cooled IGBT 180 Diode/Thyristor 182 Customized 184 4 Low Voltage Optimized Converter for Wind and Solar PV Water-Cooled IGBT STACKS Short facts Off-the-shelf product range 2 and 4-quadrant 3-phase converter IGBT inverter power density of up to 10.4kVA/L Long life expectancy Key features Maximum continuous output current from 600A up to 1,400ARMS Switching frequency up to 5kHz Inverter output voltage up to 690VAC DC bus voltage up to 1250VDC DC bus polypropylene capacitor bank lifetime rated at 100,000 hours at 40°C Analogue measurement T, VBUS, IOUT CAN interface (configuration & monitoring) Brake chopper optional Applications The SEMISTACK RE complies with wind turbine requirements, offering the capability to built 4-quadrant converters suitable with synchronous generator and double fed induction generators, with an optional brake chopper design. The platform flexibility allows to match requirement of solar PV central inverters with a DC bus voltage up to 900VDC continuous. Alternatively, SEMISTACK RE can be used in low-voltage applications requi­ring high power and high reliability, such as 3-phase inverters in a shipyard or in a battery energy storage unit installed close to renewable energy power plants. Benefits The SEMISTACK RE offers a pre-qualified power assembly ready for integration following rigorous SEMIKRON qualification and current environmental standards (IEC 60721-3). The platform design has been optimized to get the best compromise cost/ performance for a water-cooled power inverter in the mega­watt power range. The book format enables a compact integ­ration in standard industrial cabinets to achieve high power up to 6MVA low voltage. Specified for wind turbine applications, the SEMISTACK RE offers a high IGBT cycling capability and a high capacitor bank lifetime, reducing maintenance. Product range The SEMISTACK RE platform offers a standard inverter size HWD 1500x230x510 mm to fit two power sub-assemblies into a 600x600x2000 mm cabinet. The standard size has a current distribution between 1000A and 1400A. For applications with lower current rating or with a stronger constraint on the cabinet size, a smaller inverter size HWD 1250 x 230 x 510 mm offers continuous output current rated from 600A to 900ARMS. The SEMISTACK RE embeds the SKiiPIPM product family which integrates the IGBT gate driver and monitoring analogue outputs (temperature, output current and DC bus voltage). As an option, a CAN interface for supervising the SKiiP. To increase power capacity up to 6MVA, SEMISTACK RE can be put in parallel, connected together through the DC bus and controlled all-like-one with a SEMIKRON paralleling board. As an option, SEMISTACK RE platform can be offered as an integration into an industrial cabinet with suitable AC and/or DC power filters, electrical and hydraulic distribution. IGBT Converter Family up to 1MVA for Air-Cooled Inverters Air-Cooled IGBT STACKS Short facts Off-the-shelf product range Air-cooled power assemblies Maximum output current from 150A to 1500A Customisable Key features Frame sizes ranging from 75kW up to 1.5MW AC output voltage of up to 1000VAC Current measurement accuracy <2% Analogue measurements or CAN monitoring for Theatsink, Vbus, Iout Forced-air cooled platform For 300mm cabinet UL1741 and 1500VDC ready Applications The SEMIKUBE platform is optimised for general-purpose inver­ters used in high power energy storage and solar applications. Designed for the most commonly used PV central inverter ratings on the market, up to as much as 1.5MW, the SEMIKUBE 3-phase inverter operates up to 1500VDC bus voltage. Designed in accordance with IEC 62109, the platform is set to obtain UL recognition. The SEMIKUBE family complies with most AC drives application requirements. The current measurement precision of 2% (at 25°C) allows for premium motor control as required in highly dynamic applications and motion control systems. Benefits The SEMIKUBE platform is a family of pre-qualified power assemblies, which are in line with the rigorous SEMIKRON qualification tests and certifications. The platform integrates advanced technologies, which maximize performance and power density. SEMIKUBE, thanks to its modular design and patented DC connections, allows for designs in various converter power ranges. Product range The SEMIKUBE platform comes in four frame sizes for conti­nuous rated currents ranging from 150A to 1500A and features SEMITRANS 1200V and 1700V IGBT E4 power modules. The SEMIKUBE design is optimised for 2- and 3-level, 3-phase inverter topologies. A dedicated rectifier with 3-phase inverter and optional brake chopper may be added. A SEMIKRON embedded driver switches the IGBTs and provide error management and analogue outputs for current, DC voltage and heatsink temperature. For the SEMIKUBE SlimLine and SEMIKUBE MLI, a CAN interface is available for parameter configuration and diagnostics monitoring. Air cooling is provided by highly efficient long-life axial and radial fans, achieving maximum power within a compact package. The SEMIKUBE is a versatile product, allowing for converter designs around a common DC link, including four quadrant converters, multiphase converters and 2L or 3L 1500VDC inverters for central solar power systems. Thanks to its optimised layout, the SEMIKUBE Slimline integrates state-of-the-art hybrid SiC and full SiC devices. Rectifier Stacks Standards for LV Diode/Thyristor Rectifiers Diode/Thyristor STACKS Short facts Off-the-shelf product range Air-cooled power assemblies Ready for integration Customizable Key features Various topologies (B6U, B6C, B2C, B2U, W3C, W1C) Maximum continuous DC Current from 60A to 4015A Rectifier AC voltage of up to 500VAC DC bus voltage of up to 670VDC RC, fuses, cooling fans and thermal switches Applications The SEMISTACK CLASSIC product range is designed for fast integration of industrial rectifiers. Each power bridge has been sized to embed semiconductors with a suitable RC commutati­on topology, proper AC fuses and cooling devices. The high rectifier power range has been improved using a new heatsink profile, resulting in modularity, various fan options, low mainte­ nance and weight reductions. Benefits The SEMISTACK CLASSIC family offers a pre-qualified power assembly ready for integration in line with rigorous SEMIKRON qualification tests and current environmental standards. The platform design has been optimised to achieve the best balance between costs and performance for power inverters and rectifiers right up to the megawatt range. Product range The SEMISTACK family consists of a broad portfolio of over 200 stacks with different topologies of uncontrolled, half-controlled and fully controlled rectifiers. These products are available with natural or forced cooling, with or without fuses. All SEMISTACK Classics include RC protection circuitry and are optimised for fast cabinet integration. Create the Standard for Your Inverter Customized STACKS Short facts 45 years of experience in stack design, manufacture and service Global market leader in power electronic stacks 6 local engineering & production locations for direct and fast communication More than 200,000 stacks already in the field 1,500 different assemblies available Air- and water-cooled power assemblies Outsource design and manufacturing to: Focus on your core competencies Reduce production fluctuations Benefit from economy of scale Cut design, assembly and production costs Reduce your risks Applications SEMIKRON provides custom stacks to the world´s leading electric industries, ranging from simple press-fit diode plates for battery chargers or welding equipment, to thyristor and IGBT industrial drives, complex high power four-quadrant inverters for wind energy generation, and IGBT converters for main traction drives in railway applications. SEMIKRON has experience in many different applications each with their specific constraints. This extensive knowledge ensures a robust and reliable design. Benefits If our platforms and/or standard stacks do not suit the customer requirements, our stack center can always offer a 100% cus­tomized turn-key solution. Our unparalleled experience in the stack business coupled with direct access to our core semicon­ductor and driver technology enables us to provide highly effici­ent, cost effective designs to meet every customer need. We encourage exchange and transfers between the stack centers and transform local success into global competence. Thanks to this internal information exchange, you get an optimised, pre­qualified and field-tested stack in the shortest possible time. Product range SEMIKRON designs, builds and tests customized stacks based on your needs. With our long-term experience and successful track record, we are the global market leader in stack design and production. With our vast portfolio of standard stacks we deliver short lead times while adapting the stacks to your requirements. SEMIKRON continuously develops new stack as­semblies with the latest materials, topologies and technologies in order to guarantee our customers up-to-date products for a short time-to-market. Semikron offers full cycle cooperation from the product concept stage to mass delivery and beyond for repairs & aftermarket services. Costs and delivery times are kept to the minimum. Our R&D departments continuously focus on designing re-useable standard sub-assemblies in our SEMISTACKs. As an example, the SEMIKUBE platform is the result of 45 years of experience in the stacks business and with more than 75,000 SEMIKUBEs in the field, the most successful stack to date. Stack Platforms – Fully Qualified Inverter Assemblies Tailored to Your Specific Needs In addition to standard semiconductor components, SEMIKRON has developed a full range of power converter assemblies. Stack center application engineers are available to offer specific power solutions by adapting existing platforms or designing customized converters. SEMISTACK RE 188 SKiiPRACK 190 SEMIKUBE 191 SEMIKUBE SlimLine 192 SEMISTACK CLASSICS 193 For detailed information please refer to data sheets. Water-cooled IGBT SEMISTACK®RE Synchronous wind generators Double-fed wind generators Solar inverters Power in kW 50 75 100 500 1000 2000 3000 4000 5000 6000 SKiiPRACK® Synchronous wind generators Double-fed wind generators High power AC drives Power in kW 50 75 100 500 1000 2000 3000 4000 5000 6000 Air-cooled IGBT SEMIKUBE® Solar inverters Pump and compressor drives Power in kW 50 75 100 500 1000 2000 3000 4000 5000 6000 SEMIKUBE®SlimLine Solar inverters AC drives and servos Power in kW 50 75 100 500 1000 2000 3000 4000 5000 6000 Diode/Thyristor SEMISTACK®CLASSICS non isolated B6U 3-phase uncontrolled rectifier isolated non isolated B6HK 3-phase half controlled rectifier isolated non isolated B6C 3-phase fully controlled rectifier isolated non isolated W3C isolated 3-phase reverse parallel thyristor converter in kW 0 200 400 600 800 1000 2000 3000 Stacks / SEMISTACK RE Type VAC VDC Current Component Family Cooling Heatsinkprofile Isolated V V A Topology 4-Quadrant converter 3-phase inverter SKSB2 100 GD 69/11 - MA PB 690 1100 1000 SKiiP3 Water/Glycol - yes SKSB2 140 GD 69/12 U - MA PB 690 1250 1400 SKiiP4 Water/Glycol - yes Stacks / SEMISTACK RE Packages SKSB1 090 GD 69/11 - MA PB SKSB2 100 GD 69/11 - MA PB, SKSB2 120 GD 69/11 - MA PB, and SKSB2 140 GD 69/12 - MA PB Dimensions in mm Stacks / SKiiPRACK Type VAC VDC Current Component Family Cooling Heatsinkprofile Isolated V V A Topology 4-Quadrant converter Packages SKiiPRACK basic stack element, the CELL 3-Cell vertical integration Dimensions in mm Stacks / SEMIKUBE Type VACVDCCurrent Component Family Cooling Heatsinkprofile Isolated V V A Topology 3-phase inverter IGD-2-424-P1N6-DH-FA 460 900 350 SEMITRANS Forced-air cooled PX 308 yes IGD-8-426-E1F12-BH-FA 460 750 1470 SEMITRANS Forced-air cooled PX 308 yes IGD-8-474-P2F9-BI-FA 2) 690 1250 1300 SEMITRANS Forced-air cooled PX 308 yes 3-phase rectifier and inverter Footnotes: 2) In production new Packages Frames Size 1 Dimensions in mm Stacks / SEMIKUBE SlimLine Type VAC VDC Current Component Family Cooling Frame Isolated V V A Topology 3-phase inverter SKSSL20 GD 50/10 - E4 P1 G 2) 500 1000 230 SEMITRANS Forced-air cooled SL20 - SKSSL40 GD 50/10 - E4 P1 G 2) 500 1000 440 SEMITRANS Forced-air cooled SL40 ­ SKSSL80 GD 50/10 - E4 P1 G 2) 500 1000 750 SEMITRANS Forced-air cooled SL80 - SKSSL150 GD 50/10 - E4 P1 G 2) 500 1000 1500 SEMITRANS Forced-air cooled SL150 ­ SKSSL20 GD 50/10 - E4 P1 AF 2) 500 1000 230 SEMITRANS Forced-air cooled SL20 - SKSSL40 GD 50/10 - E4 P1 AF 2) 500 1000 440 SEMITRANS Forced-air cooled SL40 ­ SKSSL80 GD 50/10 - E4 P1 AF 2) 500 1000 750 SEMITRANS Forced-air cooled SL80 - SKSSL150 GD 50/10 - E4 P1 AF 2) 500 1000 1500 SEMITRANS Forced-air cooled SL150 ­ Footnotes: 2) In production new Packages Semikube SlimLine SL 20 Dimensions in mm 192 SEMIKRON Stacks / SEMISTACK CLASSICS Type VAC VDC DC Current Component Family Cooling Heatsinkprofile Isolated V V A Topology 3-phase fully-controlled thyristor bridge rectifier SKS88N B6C 60 V16 500 670 88 SEMIPACK 1 Natural cooled P3/180 yes SKS88N B6C 60 V16 SU 500 670 88 SEMIPACK 1 Natural cooled P3/180 yes SKS180F B6C 120 V16 500 670 180 SEMIPACK 1 Forced-air cooled P3/180 yes SKS180F B6C 120 V16 SU 500 670 180 SEMIPACK 1 Forced-air cooled P3/180 yes SKS215N B6C 145 V16 500 670 215 Stud devices Natural cooled P1/150 no SKS215N B6C 145 V16 SU 500 670 215 Stud devices Natural cooled P1/150 no SKS250F B6C 170 V16 500 670 250 SEMIPACK 2 Forced-air cooled P3/265 yes SKS250F B6C 170 V16 SU 500 670 250 SEMIPACK 2 Forced-air cooled P3/265 yes SKS355N B6C 240 V16 500 670 355 Stud devices Natural cooled P1/200 no SKS355N B6C 240 V16 SU 500 670 355 Stud devices Natural cooled P1/200 no SKS365F B6C 245 V16 500 670 365 SEMIPACK 2 Forced-air cooled P16/200 yes SKS365F B6C 245 V16 SU 500 670 365 SEMIPACK 2 Forced-air cooled P16/200 yes SKS570F B6C 380 V16 500 670 570 SEMIPACK 3 Forced-air cooled P16/200 yes SKS570F B6C 380 V16 SU 500 670 570 SEMIPACK 3 Forced-air cooled P16/200 yes SKS640F B6C 430 V16 500 670 640 SEMIPACK 3 Forced-air cooled P16/200 yes SKS640F B6C 430 V16 SU 500 670 640 SEMIPACK 3 Forced-air cooled P16/200 yes SKS700N B6C 470 V16 500 670 700 Capsules Natural cooled P11/415 no SKS700N B6C 470 V16 SU 500 670 700 Capsules Natural cooled P11/415 no SKS845N B6C 570 V16 500 670 845 Capsules Natural cooled U3/515 no SKS845N B6C 570 V16 SU 500 670 845 Capsules Natural cooled U3/515 no SKS970F B6C 650 V16 500 670 970 SEMIPACK 5 Forced-air cooled P16/300 yes SKS970F B6C 650 V16 SU 500 670 970 SEMIPACK 5 Forced-air cooled P16/300 yes SKS1000N B6C 670 V16 500 670 1000 Capsules Natural cooled U3/515 no SKS1000N B6C 670 V16 SU 500 670 1000 Capsules Natural cooled U3/515 no SKS1200F B6C 800 V16 500 670 1200 Capsules Forced-air cooled P17/130 no SKS1200F B6C 800 V16 SU 500 670 1200 Capsules Forced-air cooled P17/130 no SKS1500F B6C 1010 V16 500 670 1500 Capsules Forced-air cooled P17/130 no SKS1500F B6C 1010 V16 SU 500 670 1500 Capsules Forced-air cooled P17/130 no SKS1890F B6C 1270 V16 500 670 1890 Capsules Forced-air cooled P18/180 no SKS1890F B6C 1270 V16 ZU 500 670 1890 Capsules Forced-air cooled P18/180 no SKS2580F B6C 1730 V16 500 670 2580 Capsules Forced-air cooled N4/250 no SKS2580F B6C 1730 V16 ZU 500 670 2580 Capsules Forced-air cooled N4/250 no 3-phase half-controlled bridge rectifier SKS88N B6HK 60 V16 500 670 88 SEMIPACK 1 Natural cooled P3/180 yes SKS88N B6HK 60 V16 SU 500 670 88 SEMIPACK 1 Natural cooled P3/180 yes SKS180F B6HK 120 V16 500 670 180 SEMIPACK 1 Forced-air cooled P3/180 yes SKS180F B6HK 120 V16 SU 500 670 180 SEMIPACK 1 Forced-air cooled P3/180 yes SKS215N B6HK 145 V16 500 670 215 Stud devices Natural cooled P1/150 no SKS215N B6HK 145 V16 SU 500 670 215 Stud devices Natural cooled P1/150 no SKS250F B6HK 170 V16 500 670 250 SEMIPACK 2 Forced-air cooled P3/265 yes SKS250F B6HK 170 V16 SU 500 670 250 SEMIPACK 2 Forced-air cooled P3/265 yes SKS355N B6HK 240 V16 500 670 355 Stud devices Natural cooled P1/200 no SKS355N B6HK 240 V16 SU 500 670 355 Stud devices Natural cooled P1/200 no SKS365F B6HK 245 V16 500 670 365 SEMIPACK 2 Forced-air cooled P16/200 yes SKS365F B6HK 245 V16 SU 500 670 365 SEMIPACK 2 Forced-air cooled P16/200 yes SKS570F B6HK 380 V16 500 670 570 SEMIPACK 3 Forced-air cooled P16/200 yes SKS570F B6HK 380 V16 SU 500 670 570 SEMIPACK 3 Forced-air cooled P16/200 yes SKS640F B6HK 430 V16 500 670 640 SEMIPACK 3 Forced-air cooled P16/200 yes SKS640F B6HK 430 V16 SU 500 670 640 SEMIPACK 3 Forced-air cooled P16/200 yes SKS700N B6HK 470 V16 500 670 700 Capsules Natural cooled P11/415 no SKS700N B6HK 470 V16 SU 500 670 700 Capsules Natural cooled P11/415 no SKS845N B6HK 570 V16 500 670 845 Capsules Natural cooled U3/515 no SKS845N B6HK 570 V16 SU 500 670 845 Capsules Natural cooled U3/515 no SKS970F B6HK 650 V16 500 670 970 SEMIPACK 5 Forced-air cooled P16/300 yes SKS970F B6HK 650 V16 SU 500 670 970 SEMIPACK 5 Forced-air cooled P16/300 yes SKS1000N B6HK 670 V16 500 670 1000 Capsules Natural cooled U3/515 no SEMIKRON 193 Stacks / SEMISTACK CLASSICS Type VAC VDC DC Current Component Family Cooling Heatsinkprofile Isolated 3-phase half-controlled bridge rectifier SKS1000N B6HK 670 V16 SU SKS1200F B6HK 800 V16 SKS1200F B6HK 800 V16 SU SKS1500F B6HK 1010 V16 SKS1500F B6HK 1010 V16 SU SKS1890F B6HK 1270 V16 SKS1890F B6HK 1270 V16 ZU SKS2580F B6HK 1730 V16 SKS2580F B6HK 1730 V16 ZU 3-phase uncontrolled bridge rectifier SKS91N B6U 60 V16 SKS91N B6U 60 V16 SU SKS185F B6U 125 V16 SKS185F B6U 125 V16 SU SKS290F B6U 195 V16 SKS290F B6U 195 V16 SU SKS425N B6U 285 V16 SKS425N B6U 285 V16 SU SKS430F B6U 290 V16 SKS430F B6U 290 V16 SU SKS535N B6U 360 V16 SKS535N B6U 360 V16 SU SKS660F B6U 440 V16 SKS660F B6U 440 V16 SU SKS850F B6U 570 V16 SKS850F B6U 570 V16 SU SKS1185N B6U 795 V16 SKS1185N B6U 795 V16 SU SKS1220F B6U 820 V16 SKS1220F B6U 820 V16 SU SKS1630N B6U 1090 V16 SKS1630N B6U 1090 V16 ZU SKS1910N B6U 1280 V16 SKS1910N B6U 1280 V16 ZU SKS1950F B6U 1305 V16 SKS1950F B6U 1305 V16 ZU SKS2300F B6U 1540 V16 SKS2300F B6U 1540 V16 ZU SKS4015F B6U 2690 V16 3-phase reverse parallel thyristor converter SKS67N W3C 60 V16 SKS67N W3C 60 V16 SU SKS140F W3C 120 V16 SKS140F W3C 120 V16 SU SKS170N W3C 150 V16 SKS170N W3C 150 V16 SU SKS195F W3C 170 V16 SKS195F W3C 170 V16 SU SKS275N W3C 240 V16 SKS275N W3C 240 V16 SU SKS290F W3C 250 V16 SKS290F W3C 250 V16 SU SKS450F W3C 390 V16 SKS450F W3C 390 V16 SU SKS520F W3C 450 V16 Stacks / SEMISTACK CLASSICS Type VAC VDC DC Current Component Family Cooling Heatsinkprofile Isolated V V A Topology 3-phase reverse parallel thyristor converter SKS520F W3C 450 V16 SU 500 - 520 SEMIPACK 3 Forced-air cooled P16/200 yes SKS545N W3C 470 V16 500 - 545 Capsules Natural cooled P11/415 no SKS545N W3C 470 V16 SU 500 - 545 Capsules Natural cooled P11/415 no SKS650N W3C 560 V16 500 - 650 Capsules Natural cooled U3/515 no SKS650N W3C 560 V16 SU 500 - 650 Capsules Natural cooled U3/515 no SKS760F W3C 660 V16 500 - 760 SEMIPACK 5 Forced-air cooled P16/300 yes SKS760F W3C 660 V16 SU 500 - 760 SEMIPACK 5 Forced-air cooled P16/300 yes SKS780N W3C 675 V16 500 - 780 Capsules Natural cooled U3/515 no SKS780N W3C 675 V16 SU 500 - 780 Capsules Natural cooled U3/515 no SKS950F W3C 825 V16 500 - 950 Capsules Forced-air cooled P17/130 no SKS950F W3C 825 V16 SU 500 - 950 Capsules Forced-air cooled P17/130 no SKS1180F W3C 1020 V16 500 - 1180 Capsules Forced-air cooled P17/130 no SKS1180F W3C 1020 V16 SU 500 - 1180 Capsules Forced-air cooled P17/130 no SKS1540F W3C 1335 V16 500 - 1540 Capsules Forced-air cooled P18/180 no SKS1540F W3C 1335 V16 SU 500 - 1540 Capsules Forced-air cooled P18/180 no SKS2150F W3C 1860 V16 500 - 2150 Capsules Forced-air cooled N4/250 no SKS2150F W3C 1860 V16 ZU 500 - 2150 Capsules Forced-air cooled N4/250 no Packages SKS Dimensions in mm SEMIKRON 195 Systems PAGE SKAI®2 HV 198 SKAI®3 LV 198 5 Most Compact Power Electronic System Off-the-shelf for Electro-Mobility SKAI® Short facts Suitable for battery voltages 24V up to 800V Sintered power semiconductors EMI compliant Off-the-shelf versions with gate driver interface, vector control software, automotive power connections Key features Compact integration into IP67 enclosure Voltage, current and temperature sensors Gate driver with protection IGBT/ MOSFET power semiconductors Fully programmable digital signal processor EMI filters Versatile cooling system (liquid cooled, forced air cooled, base plate) DC link capacitors Motor control software Applications The SKAI off-the-shelf power electronic building block family has been introduced to cover a broad range of vehicle electrification applications. Examples are electric drivetrains with standardized motor/generator flanges to fit or retrofit the drives easily into existing vehicle designs. These types of drivetrains have been developed for many vehicle types, i.e. buses, light trucks, agriculture and construction machinery as well as marine applications or cars. Benefits The SKAI power electronic platform comprises highly integrated motor controllers, which provide the ideal powertrain solution for mobile electric and hybrid applications. Power densities up to 20 kVA / litre bring notable size reductions compared with other existing standard motor controller products. The systems operate with supply voltages of 24V to 800V and with output power ratings up to 300 kVA. The MOS-based SKAI 3 LV motor controller is a power-platform to work with a customer controller board. It uses highly reliable SKiiPtechnology with a very low-inductance connection to the DC-link capacitors and includes driver electronics, current, voltage and temperature sensors integrated into a waterproof IP66 enclosure. The compact motor controllers can withstand high vibration amplitudes of up to 10gRMS. Product range Versatile SKAI 2 HV off-the-shelf versions are available. The SKAI 3 LV is available for supply voltages between 24V and 120V. The SKAI 3 is mounted on a liquid or forced air cooler or a baseplate. Optional services include end-of-line flashing of specified software, lifetime estimation based on application profile analysis, field application support, individual paramete­rization of motor control software and more on request. Systems – Ultra Compact Power Electronics System for Utility Vehicles SEMIKRON’s motor controllers are already fully equipped with current sensors, IGBT drivers, DC link capacitors and a fast processor (DSP). The systems are designed to operate with supply voltages of 24V to 800V and with output power ratings of up to 300kVA. SKAI 2 HV 202 For detailed information please refer to data sheets. SKAI 3 LV 202 450V up to 800V SKAI®2 HV IGBT Motor Controller I in A rms 150 200 250 300 350 400 450 nom 72V up to 120V SKAI®3 LV MOSFET Sixpack Stack nom I in A rms 150 200 250 300 350 400 450 Systems / SKAI Type Vbattery (max) Inom Topology Cooling DSP Package V Arms Topology IGBT - Motor Controller SKAI 45 A2 GD12-WCI 800 300 3-Phase Liquid Yes 7 MOSFET - Motor Controller Footnotes: 1) Sample status / 4) Discontinued Systems / SKAI Packages Dimensions in mm SEMIKRON 203 Systems / SKAI Packages A P Dimensions in mm Systems / SKAI Packages E P Dimensions in mm SEMIKRON 205 Discretes PAGE Discretes 208 Chips 220 Accessories 228 6 Robust and Easy to Use Discretes Short facts Discrete diodes and thyristors for low to high power applications Available in voltage classes from 200V to 8000V Current ratings from 1A to 11000A Wide range of case designs Key features Recommended for natural convection, forced air and water cooling Compact case with high current capability Stud and disc types: forward drop selections available for easy paralleling Axial diodes for PCB mounting Diodes available in standard, avalanche and fast versions Discrete Product Range Axial diodes 1A to 6A 100V to 2000V HV axial screw diodes up to 2.5A up to 8000V Stud (screw-fit) diodes 5A to 600A 200V to 5000V Capsule (disc) diodes up to 11000A 100V to 2200V Stud (screw-fit) thyristors 10A to 300A 400V to 1800V Capsule (disc) thyristors 340A to 1200A 400V to 1800V - Easy assembly - Hermetic sealing - Rugged construction Discrete applications Key applications include welding machines, battery chargers, electroplating, soft starters, DC motor control, AC controllers (e.g. temperature control), alternators and others. With sealed cases, discrete devices make sense for both natural convection and forced cooling, allowing their use in wider fields of appli­cation. With over 50 years of field experience and millions of units produced every year, the SEMIKRON portfolio provides options that are competitive, flexible and highly reliable. Avalanche diodes - Packages SKHE 1 SKHE 2 Dimensions in mm Discretes / Diodes / Leaded Type Voltage (V) Current (A) TC IFSM@Tj=25°C VF Rth(j-c) per chip Tj Package V A °C A V K/W °C Topology Standard recovery SKN2,5 400-1600 2.5 173 180 1.20 55 -40 ... +180 E5 SKN5 200-1600 5 169 190 1.25 25 -40 ... +180 E6 Avalanche SKNa2 1300-1700 2 175 180 1.20 55 -40 ... +150 E5 SKNa4 1300-1700 4 171 190 1.20 25 -40 ... +150 E6 Packages 5.68364 8.24512 E33 / E34 / SK6 E5 3.70075 3.57762 8.24512 E6 3.2825 Dimensions in mm Discretes / Diodes / Stud Screw Fit Type Voltage (V) Current (A) TC IFSM@Tj=25°C VF Rth(j-c) per chip Tj Package V A °C A V K/W °C Topology Standard recovery SKN26 400-1600 25 100 375 1.55 2 -40 ... +180 E8 SKN46 800-1600 45 125 700 1.60 0.85 -40 ... +180 E11 SKN70 400-1600 70 125 1150 1.50 0.55 -40 ... +180 E12 SKN86 800-1600 86 129 1500 1.20 0.4 -40 ... +180 E10 Fast recovery SKN2F50 400-1000 50 105 1100 1.80 0.5 -40 ... +150 E10 Footnotes: 2) In production new Discretes / Diodes / Stud Screw Fit Type Voltage (V) Current (A) TC IFSM@Tj=25°C VF Rth(j-c) per chip Tj Package V A °C A V K/W °C Topology Fast recovery Avalanche SKNa22 3600-5000 25 104 450 1.95 1 -40 ... +160 E42 SKNa46 1400-2000 46 124 700 1.60 0.85 -40 ... +180 E11 SKNa86 1400-2000 86 129 1500 1.20 0.4 -40 ... +180 E10 SKRa26 1300-2000 26 69 375 1.55 2 -40 ... +150 E8 SKRa86 1400-2000 86 129 1500 1.20 0.4 -40 ... +180 E10 SKN1503 SG 2) 400-2200 1500 87 19000 1.30 0.033 -40 ... +175 E26 SKN7500/06 2) 600 7500 85 60000 1.12 0.009 -40 ... +180 E28 SKT10 SKT16 400-1800 16 104 370 2.4 75 0.9 -40 ... +130 B2 SKT24 SKT40 400-1800 40 80 700 1.95 120 0.66 -40 ... +130 B3 SKT50 SKT55 400-1800 55 92 1300 1.8 200 0.47 -40 ... +130 B5 SKT80 SKT100 400-1800 100 85 2000 1.75 300 0.28 -40 ... +130 B5 SKT130 SKT160 400-1600 160 84 4300 1.75 500 0.18 -40 ... +130 B6 SKT250 B7 SKT300 400-1600 300 93 11000 1.45 800 0.096 -40 ... +130 B7 SKT551 1200-1800 550 85 9000 1.65 1500 0.047 -40 ... +125 B11 SKT760 1200-1800 760 80 15000 1.65 2400 0.04 -40 ... +125 B10 SKT883 2) 400-1800 880 85 19000 1.51 2400 0.03 -40 ... +125 B23 Discretes / Chips / SEMICELL CAL (Controlled Axial Lifetime) freewheeling diodes are available in 600V / 650V, 1200V, and 1700V voltage classes with current ratings of up to 210A. Depending on the frequency of the target application, custom-designed switching properties are also available. Rectifier diodes and thyristors are designed for the 1600V voltage class, covering a wide range of current ratings up to 840A, equivalent to a die size of more than 500mm2. Variable configurations of the thyristor gate (corner vs. center gate) allow for optimised bond layout in the respective target design on the customer side. All the chips cover SEMIKRON’s extensive module and system range, which means a proven history of outstanding performance and reliability. They are compatible with various connection and assembly technologies. Customers can benefit from the wealth and depth of application knowledge that the SEMIKRON engineering team has. Freewheeling Diode CAL Rectifier Diode 225 Thyristor 226 For detailed information please refer to data sheets. Chips SEMICELL Freewheeling 600V up to 1700V Diode CAL SKCD18 C 060 I3 600 30 200 1.35 25 1.98 SKCD47 C 060 I3 600 80 720 1.35 85 6.2 SKCD81 C 060 I3 600 150 1260 1.35 155 11.5 SKCD06 C 060 I HD 600 20 95 1.23 8 1.42 SKCD16 C 060 I HD 600 50 320 1.23 25 3.87 SKCD42 C 060 I HD 600 100 810 1.23 75 11.1 SKCD24 C 065 I4F 650 50 460 1.30 39 1.1 SKCD61 C 065 I4F 650 150 1100 1.30 109 SKCD18 C 120 I3 1200 25 200 2.00 15 3 SKCD31 C 120 I3 1200 40 370 2.00 35 5.3 SKCD61 C 120 I3 1200 75 800 2.00 70 11 1200V - Freewheeling Diodes CAL High Density SKCD11 C 120 I HD 1200 15 140 1.50 12 2.9 SKCD18 C 120 I HD 1200 25 200 1.50 20 5 SKCD47 C 120 I HD 1200 85 700 1.50 70 17.4 SKCD11 C 120 I4F 1200 15 65 2.38 15 0.6 SKCD22 C 120 I4F 1200 35 170 2.30 35 1.6 SKCD31 C 120 I4F R 1200 50 270 2.22 50 4.38 SKCD46 C 120 I4F R 1200 75 430 2.17 75 4.2 SKCD71 C 120 I4F R 1200 125 760 2.12 125 7.4 SKCD108 C 120 I4F R 1200 200 1120 1.91 132 14 Discretes / Chips / SEMICELL Type SKCD61 C 170 I HD 1700 100 710 1.73 100 35 SKCD46 C 170 I4F 1700 75 450 1.71 43 17 SKCD81 C 170 I4F 1700 150 860 1.71 89 31.5 D SKR4,2 Qu bond 1600 150 35 28 270 1.00 13 SKR5,6 Qu bond 1600 150 50 40 490 1.00 25 SKR7,0 Qu bond 1600 150 75 60 890 1.00 45 SKR10,3 Qu bond 1600 150 170 135 1650 1.00 106 SKR16,3 x 18,2 Qu bond 1600 150 365 305 5100 1.00 320 SKN22,4 Qu bond 1600 150 770 634 9450 1.00 550 1600V - Rectifier - PEP SKR018XP16B1F 1600 175 50 38 270 0.97 13 SKR031XP16B1F 1600 175 85 64 490 0.97 26 SKR106XP16B1F 1600 175 290 220 1650 0.97 103 SKR297XP16B1T 1600 175 840 640 5100 0.97 310 SKT10,3 Qu ZG bond6) 1600 125 1250 1.65 100 150 SKT13,5 Qu ZG bond 1600 185 2300 1.65 100 135 SKT18,2 Qu ZG bond 1600 250 5000 1.65 100 150 1600V - Thyristor Corner Gate SKT7,0 Qu RG bond 1600 75 450 1.65 100 150 SKT10,3 Qu RG bond 1600 125 1250 1.65 100 150