IGBT stands for insulated-gate bipolar transistor. It is a bipolar transistor with an insulated gate terminal. The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications.
Showing 1–16 of 1732 results
-
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more -
Hitachi Energy
Read more